Inventor

Shunichi Hiraki

Inventor

Yokohama, JP

Overview

1979–1996

Patent span

Electricity

Primary field (CPC H)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%

Y10TTechnical subjects covered by former us classification3%

PatentTitleYear

5,554,872'Semiconductor device and method of increasing device breakdown voltage of semiconductor device'1996 5,321,289'Vertical MOSFET having trench covered with multilayer gate film'1994 5,282,018'Power semiconductor device having gate structure in trench'1994 5,242,845'Method of production of vertical MOS transistor'1993 5,126,807'Vertical MOS transistor and its production method'1992 4,729,966'Process for manufacturing a Schottky FET device using metal sidewalls as gates'1988 4,647,472'Process of producing a semiconductor device'1987 4,589,004'Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other'1986 4,560,642'Method of manufacturing a semiconductor device'1985 4,542,400'Semiconductor device with multi-layered structure'1985 4,532,004'Method of manufacturing a semiconductor device'1985 4,521,256'Method of making integrated devices having long and short minority carrier lifetimes'1985 4,507,673'Semiconductor memory device'1985 4,485,393'Semiconductor device with selective nitride layer over channel stop'1984 4,451,303'Diffusion of aluminum'1984 4,379,726'Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition'1983 4,351,894'Method of manufacturing a semiconductor device using silicon carbide mask'1982 4,240,096'Fluorine-doped P type silicon'1980 4,200,969'Semiconductor device with multi-layered metalizations'1980 4,155,802'Method of producing semiconductor device involving the use of silicon nitride as an oxidation mask'1979

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1979–1987Patents assigned to TOKYO SHIBAURA ELECTRIC CO (13)· patent assignee history

1979–1985Based in Yokohama, JP· patent location history

1984–1987Based in Hiratsuka, JP· patent location history

1985–1996Patents assigned to TOSHIBA KK (7)· patent assignee history

1985–1988Based in Hyogo, JP· patent location history

1992–1993Based in Chiba, JP· patent location history

1994–1996Based in Nagareyama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOKYO SHIBAURA ELECTRIC CO	13	1979–1987
TOSHIBA KK	7	1985–1996

Locations

Location	Patents	Span
Yokohama, JP	9	1979–1985
Nagareyama, JP	3	1994–1996
Hiratsuka, JP	3	1984–1987
Chiba, JP	2	1992–1993
Hyogo, JP	2	1985–1988