Inventor
Rajesh Kumar Malhan
Inventor
Nagoya, JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G08GTraffic control systems7%
H04WWireless communication networks7%
B60TVehicle brake control systems or parts thereof3%
C04BLime, magnesia3%
G05DSystems for controlling or regulating non-electric variables3%
G06FElectric digital data processing3%
G06KGraphical data reading3%
G06NComputing arrangements based on specific computational models3%
PatentTitleYear
11,131,992Multi-level collaborative control system with dual neural network planning for autonomous vehicle control in a noisy environment202111,094,192Method and system for generating and processing safety messages for vehicle-to-everything communication202110,300,894Auto-braking system for vehicle and method for auto-braking vehicle20198,748,948'SiC semiconductor device having CJFET and method for manufacturing the same'20148,604,540'Semiconductor device and method of manufacturing the same'20138,575,648'Silicon carbide semiconductor device and method of manufacturing the same'20138,519,452'Semiconductor device with junction field-effect transistor and manufacturing method of the same'20138,432,030'Power electronic package having two substrates with multiple semiconductor chips and electronic components'20138,373,209'Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the same'20138,274,086'Wide band gap semiconductor device including junction field effect transistor'20128,194,392'Ceramic material and electronic device'20127,999,369'Power electronic package having two substrates with multiple semiconductor chips and electronic components'20117,557,434'Power electronic package having two substrates with multiple electronic components'20097,335,928'Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove'20087,307,313'Semiconductor device including a vertical field effect transistor, having trenches, and a diode'20077,241,694'Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate'20077,230,283'Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove'20077,141,498'Method of forming an ohmic contact in wide band semiconductor'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2014Based in Nagoya, JP· patent location history
2007–2019Patents assigned to DENSO CORP (15)· patent assignee history
2009–2013Patents assigned to UNIV CAMBRIDGE (4)· patent assignee history
2009Based in Kariya, JP· patent location history
2012–2014Patents assigned to MALHAN RAJESH KUMAR (8)· patent assignee history
2012–2013Patents assigned to SUGIYAMA NAOHIRO (4)· patent assignee history
2019–2021Patents assigned to DENSO INT AMERICA INC (3)· patent assignee history
2019–2021Based in Troy, MI, US· patent location history
2021Based in Troy, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DENSO CORP | 15 | 2007–2019 |
| MALHAN RAJESH KUMARself | 8 | 2012–2014 |
| SUGIYAMA NAOHIRO | 4 | 2012–2013 |
| UNIV CAMBRIDGE | 4 | 2009–2013 |
| DENSO INT AMERICA INC | 3 | 2019–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagoya, JP | 14 | 2006–2014 |
| Troy, MI, US | 2 | 2019–2021 |
| Troy, New York, US | 1 | 2021 |
| Kariya, JP | 1 | 2009 |