Inventor

Steven T. Peake

Inventor
Warrington, GB

Overview

32→
Patents
2003–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 32 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices57%
H01LSemiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H03KPulse technique2%
H10BElectronic memory devices2%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications2%
PatentTitleYear
10,153,365Semiconductor device and a method of making a semiconductor device201810,032,907TrenchMOS20189,985,092PowerMOS20189,941,265Circuitry with voltage limiting and capactive enhancement20189,735,254'Trench-gate RESURF semiconductor device and manufacturing method'20179,570,605'Semiconductor device having a plurality of source lines being laid in both X and Y directions'20179,048,116'Semiconductor device having isolation trenches'20159,006,822'Trench-gate RESURF semiconductor device and manufacturing method'20158,901,638'Trench-gate semiconductor device'20148,513,733'Edge termination region of a semiconductor device'20138,357,971'Trench gate MOSFET and method of manufacturing the same'20137,682,889'Trench field effect transistor and method of making it'20107,642,596'Insulated gate field effect transistor'20107,579,649'Trench field effect transistor and method of making it'20097,504,690'Power semiconductor devices'20097,504,307'Semiconductor devices including voltage-sustaining space-charge zone and methods of manufacture thereof'20097,465,986'Power semiconductor device including insulated source electrodes inside trenches'20087,332,771'Trench-gate semiconductor devices'20087,232,726'Trench-gate semiconductor device and method of manufacturing'20077,122,433'Method for manufacturing trench gate semiconductor device'20067,122,860'Trench-gate semiconductor devices'20066,979,865'Cellular mosfet devices and their manufacture'20056,825,105'Manufacture of semiconductor devices with Schottky barriers'20046,800,900'Trench-gate semiconductor devices and their manufacture'20046,780,722'Field effect transistor on insulating layer and manufacturing method'20046,753,588'Semiconductor rectifier'20046,677,642'Field effect transistor structure and method of manufacture'20046,664,593'Field effect transistor structure and method of manufacture'20036,660,591'Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufacture'20036,629,303'Semiconductor device layout'20036,566,708'Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture'20036,534,367'Trench-gate semiconductor devices and their manufacture'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2006Patents assigned to KONINKL PHILIPS ELECTRONICS NV (13)· patent assignee history
2003–2018Based in Warrington, GB· patent location history
2005Based in Chesire, GB· patent location history
2007–2017Patents assigned to NXP BV (13)· patent assignee history
2009Based in Woolston, GB· patent location history
2013–2014Patents assigned to PEAKE STEVEN THOMAS (3)· patent assignee history
2013Patents assigned to RUTTER PHILIP (2)· patent assignee history
2017–2018Patents assigned to Nexperia BV (5)· patent assignee history
2017Based in Stockport, GB· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
KONINKL PHILIPS ELECTRONICS NV132003–2006
NXP BV132007–2017
Nexperia BV52017–2018
PEAKE STEVEN THOMASself32013–2014
RUTTER PHILIP22013
Locations
LocationPatentsSpan
Warrington, GB292003–2018
Stockport, GB12017
Woolston, GB12009
Chesire, GB12005