Inventor
Haifan Liang
Inventor
Fremont, CA, US
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H01LSemiconductor devices17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation16%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution16%
B23KSoldering or unsoldering8%
Y02PClimate change mitigation technologies in the production or processing of goods8%
H10NElectric solid-state devices not otherwise provided for3%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H10DInorganic electric semiconductor devices2%
C23CCoating metallic material2%
PatentTitleYear
D0928104Light-emitting diode202111,041,784Dual-arm clamping type holder for transmission electron microscopy grids and preparation method thereof202111,041,820Magnetic holder for immunoelectron microscopy grids202111,030,998Acoustic model training method, speech recognition method, apparatus, device and medium202110,857,623Annealing apparatus using two wavelengths of radiation202010,644,216Methods and devices for forming thermoelectric elements202010,580,955Thermoelectric devices and systems202010,290,796Thermoelectric devices and systems2019D0819627Thermoelectric smartwatch20189,839,976'Annealing apparatus using two wavelengths of radiation'20179,299,571'Compositional graded IGZO thin film transistor'20169,263,662'Method for forming thermoelectric element using electrolytic etching'20169,178,097'Absorbers for high efficiency thin-film PV'20159,177,876'Optical absorbers'20159,112,095'CIGS absorber formed by co-sputtered indium'20159,013,021'Optical absorbers'20158,980,682'Methods for fabricating ZnOSe alloys'20158,921,151'Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers'20148,916,411'Absorber layer for a thin film photovoltaic device with a double-graded band gap'20148,907,247'Annealing apparatus using two wavelengths of laser radiation'20148,900,664'Method of fabricating high efficiency CIGS solar cells'20148,890,024'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,859,323'Method of chalcogenization to form high quality cigs for solar cell applications'20148,859,406'Method of fabricating high efficiency CIGS solar cells'20148,859,405'Method of fabricating high efficiency CIGS solar cells'20148,852,993'Absorber layer for a thin film photovoltaic device with a double-graded band gap'20148,853,059'Method of uniform selenization and sulfurization in a tube furnace'20148,852,989'Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers'20148,765,618'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,709,861'Method of fabricating CIGS by selenization at high temperature'20148,679,893'Absorbers for high-efficiency thin-film PV'20148,664,033'Absorber layer for a thin film photovoltaic device with a double-graded band gap'20148,653,408'Annealing apparatus using two wavelengths of continuous wave laser radiation'20148,652,870'Method of fabricating CIGS by selenization at high temperature'20148,586,457'Method of fabricating high efficiency CIGS solar cells'20138,582,105'Method and apparatus for leak detection in H2Se furnace'20138,551,802'Laser annealing for thin film solar cells'20138,242,407'Annealing apparatus using two wavelengths of continuous wave laser radiation'20127,772,134'Method of annealing using two wavelengths of continuous wave laser radiation'20107,611,976'Gate electrode dopant activation method for semiconductor manufacturing'20097,595,208'Method of laser annealing using two wavelengths of radiation'20097,279,721'Dual wavelength thermal flux laser anneal'20077,262,106'Absorber layer for DSA processing'20077,109,087'Absorber layer for DSA processing'20067,078,302'Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal'20066,071,561'Chemical vapor deposition of fluorine-doped zinc oxide'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to APPLIED MATERIALS INC (14)· patent assignee history
2006–2020Based in Oakland, CA, US· patent location history
2007–2016Based in Fremont, CA, US· patent location history
2009–2012Based in Draper, UT, US· patent location history
2012–2014Patents assigned to LIANG HAIFAN (14)· patent assignee history
2012–2014Patents assigned to JENNINGS DEAN (5)· patent assignee history
2012–2014Patents assigned to PARIHAR VIJAY (5)· patent assignee history
2013–2016Patents assigned to INTERMOLECULAR INC (22)· patent assignee history
2016–2020Based in Menlo Park, CA, US· patent location history
2021Based in Beijing, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTERMOLECULAR INC | 22 | 2013–2016 |
| APPLIED MATERIALS INC | 14 | 2006–2020 |
| LIANG HAIFANself | 14 | 2012–2014 |
| JENNINGS DEAN | 5 | 2012–2014 |
| PARIHAR VIJAY | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 26 | 2007–2016 |
| Oakland, California, US | 7 | 2006–2020 |
| Menlo Park, California, US | 5 | 2016–2020 |
| Draper, UT, US | 3 | 2009–2012 |
| Beijing, CN | 2 | 2021 |