Inventor

KUO-FENG YU

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices34%

H01LSemiconductor devices28%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

B82YSpecific uses or applications of nanostructures12%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H10BElectronic memory devices3%

PatentTitleYear

12,593,496Multiple threshold voltage implementation through lanthanum incorporation2026 12,575,172Metal gate electrode formation of memory devices2026 12,550,374Semiconductor device and formation method thereof2026 12,538,571Transistor gate structures and methods of forming the same2026 12,477,813Metal gates for multi-gate semiconductor devices and method thereof2025 12,469,710Method of manufacturing a semiconductor device2025 12,463,040Methods for doping high-K metal gates for tuning threshold voltages2025 12,453,165P-type semiconductor devices with different threshold voltages and methods of forming the same2025 12,444,608Structure having gate spacers with projecting portions extending into a gate dielectric2025 12,433,011Post gate dielectric processing for semiconductor device fabrication2025 12,426,309Method of manufacturing semiconductor devices and semiconductor devices2025 12,414,329Forming low-resistance capping layer over metal gate electrode2025 12,324,216Metal gates for multi-gate devices and fabrication methods thereof2025 12,317,574Device providing multiple threshold voltages and methods of making the same2025 12,302,627Semiconductor device with non-conformal gate dielectric layers2025 12,266,575Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same2025 12,255,104Semiconductor device and method of manufacture2025 12,230,713Semiconductor device structure and methods of forming the same2025 12,218,213Semiconductor device structure and method for forming the same2025 12,170,327Semiconductor structure and manufacturing method of the same2024 12,171,091Multi-layer high-k gate dielectric structure2024 12,154,964Metal gates with layers for transistor threshold voltage tuning and methods of forming the same2024 12,142,657Gate structure for multi-gate device and related methods2024 12,142,640Semiconductor structures with multiple threshold voltage offerings and methods thereof2024 12,142,663Method for forming source/drain contacts2024 12,132,107Semiconductor structure and methods of forming same2024 12,119,390Gate spacer structures and methods for forming the same2024 12,119,389Semiconductor device with reduced trap defect and method of forming the same2024 12,094,948Forming low-resistance capping layer over metal gate electrode2024 12,074,206Integrated circuit device with improved reliability2024 12,068,392FinFET fabrication methods2024 12,068,371Method for FinFET LDD doping2024 12,057,486Metal gate cap2024 12,041,760Multi-layer high-k gate dielectric structure2024 12,040,235Semiconductor device and method of manufacture2024 12,022,643Multi-layer high-k gate dielectric structure2024 12,009,400Device providing multiple threshold voltages and methods of making the same2024 11,972,982Method of manufacturing a semiconductor device2024 11,908,745Semiconductor device with non-conformal gate dieletric layers2024 11,894,276Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same2024 11,855,208Method for forming fin field effect transistor (FinFET) device structure2023 11,855,176FinFET structure with doped region2023 11,769,817Method for forming source/drain contacts2023 11,764,284Semiconductor device with reduced trap defect and method of forming the same2023 11,735,484Post gate dielectric processing for semiconductor device fabrication2023 11,664,279Multiple threshold voltage implementation through lanthanum incorporation2023 11,605,563Semiconductor device with non-conformal gate dielectric layers2023 11,605,720Metal gate cap2023 11,437,493Gate spacer structures and methods for forming the same2022 11,437,280Semiconductor device and method of manufacture2022 11,404,322Method of manufacturing a semiconductor device2022 11,398,384Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer2022 11,355,635Semiconductor structure and methods of forming same2022 11,342,188Methods for doping high-k metal gates for tuning threshold voltages2022 11,329,139Semiconductor device with reduced trap defect and method of forming the same2022 11,276,766FinFET fabrication methods2022 11,233,140Semiconductor device and manufacturing method thereof2022 11,195,931Gate structure, semiconductor device and the method of forming semiconductor device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (58)· patent assignee history

2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	58	2021–2026

Locations

Location	Patents	Span
TW	58	2021–2026