Inventor

Chen-Ming Huang

Inventor
Hsinchu, TW

Overview

60→
Patents
2003–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 60 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices19%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10BElectronic memory devices10%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
G01RMeasuring electric variables2%
G11CStatic stores2%
H05KPrinted circuits2%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations1%
PatentTitleYear
10,679,903Semiconductor device and method for fabricating the same202010,629,605Semiconductor device and method of manufacturing202010,357,867Polishing system201910,312,146Method for fabricating semiconductor device201910,290,723Semiconductor device with metal gate201910,263,004Semiconductor device and method of manufacturing201910,032,675Method for fabricating semiconductor device201810,008,581Semiconductor device having metal gate with nitrogen rich portion and titanium rich portion20189,947,678Wing-type projection between neighboring access transistors in memory devices20189,859,147'Fin structure cutting process'20189,824,931'Semiconductor device and method for fabricating the same'20179,786,502'Method for forming fin structures for non-planar semiconductor device'20179,748,144'Method of fabricating semiconductor device'20179,718,164'Polishing system and polishing method'20179,653,402'Semiconductor device and method for fabricating the same'20179,608,062'Semiconductor structure and method of forming the same'20179,607,985'Semiconductor device and method of fabricating the same'20179,524,909'Fin structure and fin structure cutting process'20169,502,280'Two-step shallow trench isolation (STI) process'20169,484,263'Method of removing a hard mask on a gate'20169,466,691'Fin shaped structure and method of forming the same'20169,443,952'Method of forming semiconductor device'20169,437,603'Wing-type projection between neighboring access transistors in memory devices'20169,377,503'Semiconductor test structures'20169,330,901'Nitrogen-containing oxide film and method of forming the same'20169,257,326'Method of making backside illuminated image sensors'20169,250,286'Semiconductor test structures'20169,006,070'Two-step shallow trench isolation (STI) process'20158,952,474'Method of fabricating backside-illuminated image sensor'20158,946,847'Backside illuminated image sensors and method of making the same'20158,809,179'Method for reducing topography of non-volatile memory and resulting memory cells'20148,796,105'Method and apparatus for preparing polysilazane on a semiconductor wafer'20148,791,541'Backside-illuminated image sensor having a supporting substrate'20148,785,442'Compound as antagonist of lysophosphatidic acid receptor, composition, and use thereof'20148,704,224'Semiconductor test structures'20148,692,299'Two-step shallow trench isolation (STI) process'20148,674,469'Isolation structure for backside illuminated image sensor'20148,614,131'Self-aligned static random access memory (SRAM) on metal gate'20138,605,276'Enhanced defect scanning'20138,592,432'Compounds and compositions as protein kinase inhibitors'20138,586,404'Method for reducing contact resistance of CMOS image sensor'20138,352,062'Advanced process control for gate profile control'20138,283,745'Method of fabricating backside-illuminated image sensor'20128,247,262'Method for reducing contact resistance of CMOS image sensor'20127,951,670'Flash memory cell with split gate structure and method for forming the same'20117,868,311'Phase change memory element and method for forming the same'20117,667,261'Split-gate memory cells and fabrication methods thereof'20107,652,318'Split-gate memory cells and fabrication methods thereof'20107,569,909'Phase change memory devices and methods for manufacturing the same'20097,557,402'High write and erase efficiency embedded flash cell'20097,176,083'High write and erase efficiency embedded flash cell'20077,056,791'Method of forming an embedded flash memory device'20066,921,695'Etching method for forming a square cornered polysilicon wordline electrode'20056,878,986'Embedded flash memory cell having improved programming and erasing efficiency'20056,855,648'Method of reducing stress migration in integrated circuits'20056,849,546'Method for improving interlevel dielectric gap filling over semiconductor structures having high aspect ratios'20056,819,593'Architecture to suppress bit-line leakage'20046,693,365'Local electrochemical deplating of alignment mark regions of semiconductor wafers'20046,649,489'Poly etching solution to improve silicon trench for low STI profile'20036,638,409'Stable plating performance in copper electrochemical plating'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (33)· patent assignee history
2003–2020Based in Taipei, TW· patent location history
2003–2005Based in Jungli, TW· patent location history
2005–2019Based in Hsinchu, TW· patent location history
2009–2011Based in Hsinchu County, TW· patent location history
2012–2016Patents assigned to HUANG CHEN-MING (13)· patent assignee history
2012–2016Patents assigned to WU CHIH-JEN (10)· patent assignee history
2016–2020Patents assigned to UNITED MICROELECTRONICS CORP (16)· patent assignee history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2016–2020Based in Tainan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG332003–2016
UNITED MICROELECTRONICS CORP162016–2020
HUANG CHEN-MINGself132012–2016
WU CHIH-JEN102012–2016
TAIWAN SEMICONDUCTOR MFG CO LTD72016–2020
Locations
LocationPatentsSpan
Hsinchu, TW262005–2019
Taipei, TW192003–2020
Tainan, TW42016–2020
Jungli, TW42003–2005
Hsinchu County, TW22009–2011