Inventor
CHIH-HUNG HSIEH
Inventor
TW
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10BElectronic memory devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G06FElectric digital data processing5%
E06BFixed or movable closures for openings in buildings, vehicles, fences or like enclosures in general, e.g. doors, windows, blinds, gates2%
G05BControl or regulating systems in general2%
G06NComputing arrangements based on specific computational models2%
G11CStatic stores2%
PatentTitleYear
12,598,764Semiconductor device structure and methods of forming the same202612,520,574Semiconductor device structure including forksheet transistors and methods of forming the same202612,490,509Method of manufacturing semiconductor devices and a semiconductor device202512,476,113Semiconductor device and manufacturing method thereof202512,394,663Isolation with multi-step structure202512,324,224Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions202512,190,234Anomaly detection device and anomaly detection method based on generative adversarial network architecture202511,908,864Method of manufacturing semiconductor devices and a semiconductor device202411,792,969Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM202311,728,206Isolation with multi-step structure202311,721,589Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same202311,639,631Window shade and actuating system thereof202311,545,495Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM202311,276,696SRAM structure and method for manufacturing SRAM structure202211,251,069Method for forming isolation with multi-step structure202211,195,760Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same202111,164,746Method of manufacturing semiconductor devices and a semiconductor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (14)· patent assignee history
2021–2026Based in TW· patent location history
2023Patents assigned to TEH YOR CO LTD (1)· patent assignee history
2025Patents assigned to IND TECH RES INST (1)· patent assignee history
2026Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 14 | 2021–2026 |
| IND TECH RES INST | 1 | 2025 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2026 |
| TEH YOR CO LTD | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 17 | 2021–2026 |