Inventor
Jui-Chun Chang
Inventor
Hsinchu, TW
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
PatentTitleYear
10,840,328Semiconductor devices having charge-absorbing structure disposed over substrate and methods for forming the semiconductor devices202010,573,738Method and apparatus for power device with multiple doped regions202010,396,196Semiconductor devices201910,347,524Trench isolation structures and methods for forming the same201910,205,014Method and apparatus for power device with multiple doped regions201910,056,260Schottky diode with dielectrically isolated diffusions, and method of manufacturing the same20189,773,902'Trench-gate semiconductor device and method for forming the same'20179,773,681'Semiconductor device with a trench and method for manufacturing the same'20179,666,485'Method for forming semiconductor device having super-junction structures'20179,646,964'Semiconductor device'20179,634,099'Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same'20179,559,200'Method and apparatus for power device with multiple doped regions'20179,548,375'Vertical diode and fabrication method thereof'20179,502,584'Vertical diode and fabrication method thereof'20169,478,644'Semiconductor device'20169,443,943'Semiconductor device and fabrication method thereof'20169,406,742'Semiconductor device having super-junction structures'20169,391,139'Top-side contact structure and fabrication method thereof'20169,390,983'Semiconductor device and method for fabricating the same'20169,324,785'Semiconductor device and method for fabricating the same'20169,324,786'Semiconductor device and method for fabricating the same'20169,306,034'Method and apparatus for power device with multiple doped regions'20169,263,436'Semiconductor device and method for fabricating the same'20169,236,459'Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices'20169,178,057'Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same'20159,129,989'Semiconductor device and method for manufacturing the same'20159,054,129'Semiconductor device and method for manufacturing the same'20159,048,312'Semiconductor device and method for forming the same'20158,987,820'Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same'20158,921,202'Semiconductor device and fabrication method thereof'20148,907,382'Semiconductor device and fabrication method thereof'20148,803,236'Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same'20148,049,307'Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices'20117,682,955'Method for forming deep well of power device'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to VANGUARD INT SEMICONDUCT CORP (34)· patent assignee history
2010–2020Based in Hsinchu, TW· patent location history
2014–2016Patents assigned to CHANG JUI-CHUN (3)· patent assignee history
2014–2016Patents assigned to TU SHANG-HUI (2)· patent assignee history
2014Patents assigned to LIN GEENG-LIH (1)· patent assignee history
2016Patents assigned to JOU YEH-NING (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VANGUARD INT SEMICONDUCT CORP | 34 | 2010–2020 |
| CHANG JUI-CHUNself | 3 | 2014–2016 |
| TU SHANG-HUI | 2 | 2014–2016 |
| JOU YEH-NING | 1 | 2016 |
| LIN GEENG-LIH | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 34 | 2010–2020 |