Inventor
Yuancheng YANG
Inventor
CN
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices28%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
G11CStatic stores12%
H10DInorganic electric semiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
B23KSoldering or unsoldering1%
PatentTitleYear
12,597,468Three-dimensional memory devices and fabricating methods thereof202612,557,299Three-dimensional memory devices and fabricating methods thereof202612,525,558Three-dimensional memory devices and methods for forming the same202612,520,486Memory devices and methods for forming the same202612,490,432Method of fabricating a semiconductor device using laser annealing202512,451,452Three-dimensional memory and fabrication method thereof202512,444,679Three-dimensional memory devices having a cylindrical body and plate line contact segments202512,439,584Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention202512,412,628Methods for forming three-dimensional memory devices202512,406,928Three-dimensional memory devices and fabricating methods thereof202512,388,037Three-dimensional memory devices and methods for forming the same202512,388,036Three-dimensional memory devices and methods for forming the same202512,328,867Memory devices having vertical transistors and methods for forming the same202512,327,592Vertical memory devices and methods for operating the same202512,322,596Methods for thermal treatment of a semiconductor layer in semiconductor device202512,300,648Three-dimensional memory devices and methods for forming the same202512,278,209Peripheral circuit having recess gate transistors and method for forming the same202512,272,645Three-dimensional memory devices and fabricating methods thereof202512,274,055Control gate structures in three-dimensional memory devices and methods for forming the same202512,262,533Dynamic flash memory (DFM) with multi-cells202512,193,230Three-dimensional memory device and method for forming the same202512,191,269Three-dimensional memory device and method for forming the same202512,176,309Three-dimensional memory devices and methods for forming the same202412,170,257Three-dimensional memory devices and methods for forming the same202412,127,393Memory devices having vertical transistors and methods for forming the same202412,113,037Three-dimensional memory devices and methods for forming the same202412,089,413Peripheral circuit having recess gate transistors and method for forming the same202412,082,399Memory devices having vertical transistors in staggered layouts202412,082,407Three-dimensional memory device and method for forming the same202412,082,408Three-dimensional memory devices having first semiconductor structure bonded with second semiconductor structure each including peripheral circuit and methods for forming the same202412,075,621Three-dimensional memory device and method for forming the same202412,069,854Three-dimensional memory devices and methods for forming the same202412,027,207Vertical memory devices and methods for operating the same202412,020,750Three-dimensional memory devices202411,996,152Three-dimensional memory devices and methods for forming the same202411,935,596Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same202411,929,119Three-dimensional memory devices and memory system2024Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2024–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (37)· patent assignee history
2024Patents assigned to YANGTZE MEMORY TECH CO ˜LTD (1)· patent assignee history
2024–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 37 | 2024–2026 |
| YANGTZE MEMORY TECH CO ˜LTD | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 37 | 2024–2026 |