LexDanaLexDanabeta
Inventor

SAI-HOOI YEONG

Inventor
TW

Overview

341→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 341 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices24%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G11CStatic stores8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures4%
H10NElectric solid-state devices not otherwise provided for1%
G06FElectric digital data processing0%
H01GCapacitors0%
PatentTitleYear
12,598,796High aspect ratio gate structure formation202612,586,619Integrated circuit device and methods202612,588,267Semiconductor device and method of forming the same202612,588,213Semiconductor memory structure having enhanced memory window and method for manufacturing the same202612,575,107Memory device202612,568,656Thin film transistor including a dielectric diffusion barrier and methods for forming the same202612,563,736Memory device and method of forming the same202612,557,293Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same202612,550,383Double gate ferroelectric field effect transistor devices and methods for forming the same202612,543,560Semiconductor structure202612,532,723Scalable patterning through layer expansion process and resulting structures202612,513,907Method of forming memory device202512,506,071Semiconductor memory device and method for manufacturing the same202512,505,871Memory cell and method of operating the same202512,495,583Semiconductor arrangement and method of manufacture202512,484,228Semiconductor chip202512,484,292Methods of reducing parasitic capacitance in semicondutor devices202512,477,744Three-dimensional memory device and manufacturing method thereof202512,457,753Back-end-of-line selector for memory device202512,446,230Ferroelectric memory device and memory array202512,446,210Memory cell and method202512,433,008FinFET structure with airgap and method of forming the same202512,426,325Semiconductor device structure with nanostructure202512,417,799Memory circuit and write method202512,414,318Fabrication of field effect transistors with ferroelectric materials202512,414,305Transistor, memory device and manufacturing method of memory device202512,408,315Flexible merge scheme for source/drain epitaxy regions202512,408,419Semiconductor device and method for forming capacitor structure202512,402,377Semiconductor device and method202512,400,861Semiconductor device and method of manufacturing202512,396,175Three-dimensional stackable ferroelectric random access memory devices and methods of forming202512,396,211Thin film transistor, semiconductor device and method of fabricating thin film transistor202512,389,645Semiconductor structure with extended contact structure202512,387,935Dipole-engineered high-k gate dielectric and method forming same202512,382,671Semiconductor structure and manufacturing method for the semiconductor structure202512,376,357Fin field-effect transistor device and method202512,376,351Self-aligned contact air gap formation202512,376,347Ferroelectric memory device and method of forming the same202512,376,348Semiconductor device structure and method for forming the same202512,369,354Thin film transistor including a compositionally- graded gate dielectric and methods for forming the same202512,363,894Method for fabricating three-dimensional memory202512,362,187Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure202512,361,981Using embedded switches for reducing capacitive loading on a memory system202512,356,647Epitaxial structures for fin-like field effect transistors202512,355,026Method of writing to or erasing multi-bit memory storage device202512,349,363Ferroelectric device and methods of forming the same202512,349,361Ferroelectric memory device and method of forming the same202512,324,146Vertical DRAM structure and method of formation202512,324,194Source/drain engineering for ferroelectric field effect transistors202512,322,595Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture202512,317,506Ferroelectric device and methods of fabrication thereof202512,317,505Memory array including epitaxial source lines and bit lines202512,310,094Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers202512,310,056Method of forming semiconductor device202512,310,028Three-dimensional memory device and manufacturing method thereof202512,300,728Semiconductor devices202512,302,557Three-dimensional memory device and method of manufacture202512,300,739Metal oxide interlayer structure for NFET and PFET202512,302,636Three-dimensional memory device202512,302,592Metal insulator metal (MIM) structure and manufacturing method thereof202512,300,735Air gap in inner spacers and methods of fabricating the same in field-effect transistors202512,302,590Ferroelectric MFM capacitor array and methods of making the same202512,302,553Vertical DRAM structure and method202512,300,738Semiconductor device and manufacturing method for the semiconductor device202512,293,9993D semiconductor package including memory array202512,295,145Memory device and methods of forming same202512,289,893Semiconductor devices including FTJ structure202512,289,892Memory device structure and manufacturing method thereof202512,284,810Memory device and manufacturing method thereof202512,278,287Selective internal gate structure for ferroelectric semiconductor devices202512,272,751Negative capacitance transistor with a diffusion blocking layer202512,261,043Seed layer for ferroelectric memory device and manufacturing method thereof202512,255,236Self-aligned active regions and passivation layer and methods of making the same202512,256,550Three-dimensional memory device and method202512,256,551Method for forming semiconductor memory structure202512,249,640Conformal transfer doping method for Fin-like field effect transistor202512,250,829Memory device, and integrated circuit device202512,243,932Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202512,245,436Device structure including field effect transistors and ferroelectric capacitors202512,243,573Semiconductor devices including ferroelectric memory and methods of forming the same202512,245,435Grid structure to reduce domain size in ferroelectric memory device202512,238,926Three-dimensional memory device and method202512,237,231FINFET device with wrapped-around epitaxial structure and manufacturing method thereof202512,225,731Memory array contact structures202512,225,733System-on-chip with ferroelectric random access memory and tunable capacitor202512,218,209Contacts for semiconductor devices and methods of forming the same202512,217,826Memory array test structure and method of forming the same202512,211,753Semiconductor device202512,211,922Gate air spacer for fin-like field effect transistor202512,207,478Memory device and methods of forming same202512,199,188Thin film transistor including a compositionally-modulated active region and methods for forming the same202512,193,242Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same202512,193,241Ferroelectric memory device and method of forming the same202512,193,2403D ferroelectric memory202512,171,102Methods of manufacturing three-dimensional memory devices with conductive spacers202412,170,265Semiconductor package202412,165,707Memory with FRAM and SRAM of IC202412,165,970Semiconductor memory structure and interconnect structure of semiconductor memory structure202412,165,925Fin field effect transistor having airgap and method for manufacturing the same202412,167,607Ferroelectric memory device and method of forming the same202412,167,606Memory device and method of forming thereof202412,166,129Semiconductor device structure with inner spacer202412,154,902Semiconductor device and manufacturing method thereof202412,154,938Ferroelectric MFM capacitor array and methods of making the same202412,154,986Semiconductor device and method202412,150,311Embedded ferroelectric FinFET memory device202412,150,309Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structure202412,150,308Semiconductor chip202412,148,828Semiconductor device and manufacturing method thereof202412,136,659Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202412,137,570Three dimensional memory device202412,137,569Memory device and method of forming the same202412,137,571Integrated circuit including three-dimensional memory device202412,133,390Memory array202412,131,943Semiconductor structure having epitaxial structure202412,125,922Nanosheet field-effect transistor device and method of forming202412,125,920Dual-layer channel transistor and methods of forming same202412,125,706Semiconductor device and method of manufacture202412,120,885Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same202412,119,402Semiconductor devices with ferroelectric layer and methods of manufacturing thereof202412,119,259Transistor gate contacts and methods of forming the same202412,113,115Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same202412,114,506Semiconductor structure and method of fabricating the same202412,106,814Method of testing a memory circuit and memory circuit202412,101,939Three-dimensional memory device with ferroelectric material202412,087,811Three dimensional metal insulator metal capacitor structure202412,089,414Memory device and method of forming the same202412,087,621Air gaps in memory array structures202412,078,607Wide-bandgap semiconductor layer characterization202412,069,864Memory array and methods of forming same202412,069,868Gated ferroelectric memory cells for memory cell array and methods of forming the same202412,069,865Semiconductor devices and methods of manufacture202412,063,787Three-dimensional memory device and manufacturing method thereof202412,058,870High density 3D FERAM202412,058,867Memory device202412,058,869Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same202412,051,750Memory array gate structures202412,051,663Memory devices and methods of forming the same202412,041,786Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor202412,040,387Negative-capacitance field effect transistor202412,041,7763D memory with graphite conductive strips202412,040,409Thin film transistor including a dielectric diffusion barrier and methods for forming the same202412,041,783Ferroelectric memory device and method of forming the same202412,040,006Memory array including dummy regions202412,033,853Semiconductor devices and methods of manufacture202412,034,058Gate stack treatment for ferroelectric transistors202412,034,045Semiconductor device structure with nanostructure202412,022,660Semiconductor device and method of manufacture202412,020,941Dipole-engineered high-k gate dielectric and method forming same202412,009,263Methods of reducing parasitic capacitance in semiconductor devices202412,002,534Memory array word line routing202411,997,854Semiconductor structure and method for manufacturing the same202411,997,855Back-end-of-line selector for memory device202411,990,529Air gap in inner spacers and methods of fabricating the same in field-effect transistors202411,991,886Three-dimensional stackable ferroelectric random access memory devices and methods of forming202411,991,8883D stackable memory and methods of manufacture202411,985,8253D memory array contact structures202411,974,441Memory array including epitaxial source lines and bit lines202411,968,838Air gaps in memory array structures202411,961,897Negative capacitance transistor with external ferroelectric structure202411,956,968Memory device202411,955,548Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device202411,950,428Three-dimensional memory device and manufacturing method thereof202411,950,427Ferroelectric memory device and method of forming the same202411,942,177Using embedded switches for reducing capacitive loading on a memory system202411,943,933Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same202411,942,523Semiconductor devices and methods of forming the same202411,935,624Memory array test structure and method of forming the same202411,923,413Semiconductor structure with extended contact structure202411,923,252Semiconductor device and method for manufacturing the same202411,923,459Transistor including hydrogen diffusion barrier film and methods of forming same202411,916,144Semiconductor device and manufacturing method thereof202411,916,128Metal oxide interlayer structure for nFET and pFET202411,915,787Integrated circuit device and methods202411,910,615Memory device and manufacturing method thereof202411,910,617Ferroelectric memory device and method of forming the same202411,908,936Double gate ferroelectric field effect transistor devices and methods for forming the same202411,901,450Ferroelectric structure for semiconductor devices202411,901,411Semiconductor device and method202411,901,408Self-aligned contact air gap formation202411,903,221Three dimensional semiconductor device with memory stack202411,903,189Three-dimensional memory and fabricating method thereof202411,869,971Multi-bit memory storage device202411,869,766Seed layer for ferroelectric memory device and manufacturing method thereof202411,864,392Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same202411,862,713Conformal transfer doping method for fin-like field effect transistor202411,862,219Memory cell and method of operating the same202411,864,393Memory device, integrated circuit device and method202411,855,182Low-k gate spacer and methods for forming the same202311,856,786Integrated circuit including three-dimensional memory device202311,855,226Thin film transistor, semiconductor device and method of fabricating thin film transistor202311,855,224Leakage prevention structure and method202311,855,205Semiconductor device with negative capacitance structure202311,855,162Contacts for semiconductor devices and methods of forming the same202311,854,868Scalable patterning through layer expansion process and resulting structures202311,856,743Flexible merge scheme for source/drain epitaxy regions202311,856,780Grid structure to reduce domain size in ferroelectric memory device202311,854,907Contact air gap formation and structures thereof202311,856,787Semiconductor device and method of manufacture202311,855,128Metal insulator metal (MIM) structure and manufacturing method thereof202311,856,785Memory array and methods of forming same202311,849,589Semiconductor structure and manufacturing method thereof202311,849,587Three-dimensional memory device and manufacturing method thereof202311,848,381Methods of operating multi-bit memory storage device202311,848,370Semiconductor device and manufacturing method for the semiconductor device202311,843,050Semiconductor arrangement and method of manufacture202311,839,0803D memory with graphite conductive strips202311,837,536Semiconductor memory structure and interconnect structure of semiconductor memory structure202311,837,660Semiconductor device and method202311,832,450Embedded ferroelectric FinFET memory device202311,830,550Memory with FRAM and SRAM of IC202311,823,894Semiconductor devices and methods of manufacture202311,824,101High aspect ratio gate structure formation202311,817,489Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,817,485Self-aligned active regions and passivation layer and methods of making the same202311,805,657Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same202311,798,809Semiconductor device and method of manufacturing202311,798,941Semiconductor device having an upper epitaxial layer contacting two lower epitaxial layers202311,791,393Semiconductor device and method of forming the same202311,791,421Nanosheet field-effect transistor device and method of forming202311,784,252Semiconductor device structure202311,784,052Dipole-engineered high-k gate dielectric and method forming same202311,784,235Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile202311,777,031Semiconductor structure and manufacturing method for the semiconductor structure202311,777,017Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices202311,776,855Fin field effect transistor having airgap and method for manufacturing the same202311,770,934Semiconductor structure and method of fabricating the same202311,765,892Three-dimensional memory device and method of manufacture202311,764,292Negative-capacitance field effect transistor202311,764,281Gate air spacer for fin-like field effect transistor202311,756,824Semiconductor structure having epitaxial structure202311,758,736Ferroelectric random access memory devices and methods202311,749,370Method of testing a memory circuit and memory circuit202311,735,641FinFET structure with airgap and method of forming the same202311,735,648Epitaxial structures for fin-like field effect transistors202311,735,471Semiconductor structure and method for forming the same202311,729,986Ferroelectric memory device and method of forming the same202311,729,9973D stackable memory and methods of manufacture202311,729,994Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same202311,727,976Semiconductor devices including ferroelectric memory and methods of forming the same202311,716,856Three-dimensional memory device and method202311,710,665Semiconductor device and method of manufacture202311,699,655Transistor and fabrication method thereof202311,695,073Memory array gate structures202311,682,675Fin field-effect transistor device and method202311,672,126Three-dimensional memory device and manufacturing method thereof202311,670,715Semiconductor devices with ferroelectric layer and methods of manufacturing thereof202311,670,718Semiconductor device structure with inner spacer202311,664,420Semiconductor device and method202311,657,863Memory array test structure and method of forming the same202311,653,500Memory array contact structures202311,646,379Dual-layer channel transistor and methods of forming same202311,647,635Ferroelectric memory device and method of forming the same202311,637,126Memory device and method of forming the same202311,631,698Three-dimensional memory device with ferroelectric material202311,626,504Fin field effect transistor (FinFET) device structure202311,621,338Gate stack treatment for ferroelectric transistors202311,610,841Interconnect structure for semiconductor device and methods of fabrication thereof202311,600,520Air gaps in memory array structures202311,594,633Selective internal gate structure for ferroelectric semiconductor devices202311,594,612Metal oxide interlayer structure for nFET and pFET202311,588,018Semiconductor device structure with nanostructure and method for forming the same202311,587,950Memory device and method of forming the same202311,581,337Three-dimensional memory device and manufacturing method thereof202311,581,336Semiconductor memory structure and device202311,581,436Negative capacitance transistor with a diffusion blocking layer202311,581,368Memory device, integrated circuit device and method202311,581,410Semiconductor device and method202311,574,9293D ferroelectric memory202311,574,928Semiconductor memory structure and method for forming the same202311,568,912Memory cell and method of operating the same202311,569,250Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same202311,563,006Semiconductor structure and method for manufacturing thereof202311,563,079Metal insulator metal (MIM) structure and manufacturing method thereof202311,557,517Fin field effect transistor having airgap and method for manufacturing the same202311,552,103Three-dimensional stackable ferroelectric random access memory devices and methods of forming202311,545,500Three-dimensional memory device and method202311,532,343Memory array including dummy regions202211,532,746Multi-bit memory storage device and method of operating same202211,527,542System-on-chip with ferroelectric random access memory and tunable capacitor202211,527,552Ferroelectric memory device and method of forming the same202211,522,046Memory device and method of fabricating the memory device202211,515,332Ferroelectric memory device and method of forming the same202211,515,313Gated ferroelectric memory cells for memory cell array and methods of forming the same202211,508,753Embedded ferroelectric FinFET memory device202211,508,752Grid structure to reduce domain size in ferroelectric memory device202211,508,754Semiconductor memory structure and method for forming the same202211,501,812Semiconductor devices including ferroelectric memory and methods of forming the same202211,502,183Air gap in inner spacers and methods of fabricating the same in field-effect transistors202211,488,659Memory circuit and write method202211,476,352Conformal transfer doping method for fin-like field effect transistor202211,476,166Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers202211,469,324Semiconductor device with negative capacitance structure and method for forming the same202211,450,733Three dimensional metal insulator metal capacitor structure202211,450,686High density 3D FERAM202211,450,676Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor202211,450,362Memory device, integrated circuit device and method202211,444,0693D semiconductor package including memory array202211,444,025Transistor and fabrication method thereof202211,444,202Semiconductor device and method of forming the same2022

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (341)· patent assignee history
2021–2026Based in TW· patent location history
2024Patents assigned to TAIWAN SEMICONDUTOR MFG CO LTD (1)· patent assignee history
2024–2025Based in MY· patent location history
2025Patents assigned to NATIONAL YANG MING CHIAO TUNG UNIV (1)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDUCTIR MFG CO LTD (1)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD3412021–2026
NATIONAL YANG MING CHIAO TUNG UNIV12025
TAIWAN SEMICONDUCTIR MFG CO LTD12025
TAIWAN SEMICONDUCTOR MFG COMPANY CO LTD12025
TAIWAN SEMICONDUTOR MFG CO LTD12024
Locations
LocationPatentsSpan
TW3382021–2026
MY32024–2025