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Inventor

Tsann Lin

Inventor
Saratoga, CA, US

Overview

101→
Patents
1994–2018
Patent span
Physics
Primary field (CPC G)

Patents· 101 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer29%
B82YSpecific uses or applications of nanostructures23%
Y10TTechnical subjects covered by former us classification15%
G01RMeasuring electric variables14%
H01FMagnets6%
H10NElectric solid-state devices not otherwise provided for5%
G11CStatic stores2%
C23CCoating metallic material1%
H01LSemiconductor devices1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,050,192Magnetic memory device having buffer layer20188,946,707'Tunneling magnetoresistance (TMR) read sensor with an integrated auxilliary ferromagnetic shield'20158,947,835'Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure'20158,836,000'Bottom-type perpendicular magnetic tunnel junction (pMTJ) element with thermally stable amorphous blocking layers'20148,675,317'Current-perpendicular-to-plane (CPP) read sensor with dual seed and cap layers'20148,553,370'TMR reader structure having shield layer'20138,537,504'Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layers'20138,451,566'Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer and seed layers'20138,325,450'Low resistance tunnel magnetoresistance (TMR) structure'20128,274,762'Methods and systems for using resistivity of sensor film in an element shunt'20128,243,401'Tunneling magnetoresistance read sensor with dual sense layers'20128,213,132'Magnetic sensor having a physically hard insulation layer over a magnetic bias structure'20128,169,753'Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers'20128,164,863'Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers'20128,133,363'Dual magnetic tunnel junction sensor with a longitudinal bias stack'20128,094,421'Current-perpendicular-to-plane (CPP) read sensor with multiple reference layers'20128,081,405'Current-perpendicular-to-plane (CPP) read sensor with smoothened multiple reference layers'20117,830,641'Tunneling magnetoresistive (TMR) sensor with a Co-Fe-B free layer having a negative saturation magnetostriction'20107,796,364'Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield'20107,697,244'Magnetic head with stabilized ferromagnetic shield'20107,672,089'Current-perpendicular-to-plane sensor with dual keeper layers'20107,650,684'Method for fabricating a magnetic head including a read sensor'20107,652,855'Magnetic sensor with extended free layer and overlaid leads'20107,606,009'Read sensor stabilized by bidirectional anisotropy'20097,599,153'Method and apparatus providing a stabilized top shield in read head for magnetic recording'20097,570,462'Read sensor with a uniform longitudinal bias stack'20097,554,775'GMR sensors with strongly pinning and pinned layers'20097,506,429'Method of constructing a magnetic sensor'20097,488,609'Method for forming an MgO barrier layer in a tunneling magnetoresistive (TMR) device'20097,472,469'Method for fabricating a magnetic head having a sensor stack and two lateral stack'20097,469,465'Method of providing a low-stress sensor configuration for a lithography-defined read sensor'20087,467,458'Method for use in making a read head'20087,443,637'Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same'20087,413,636'Method for manufacturing a dual spin valve sensor having a longitudinal bias stack'20087,394,624'Read sensor with a uniform longitudinal bias stack'20087,367,109'Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment'20087,344,330'Topographically defined thin film CPP read head fabrication'20087,324,311'Rie defined CPP read heads'20087,244,169'In-line contiguous resistive lapping guide for magnetic sensors'20077,239,489'Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process'20077,228,617'Method for fabricating a GMR read head portion of a magnetic head'20077,230,801'Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process'20077,227,728'Method and apparatus for a current-perpendicular-to-plane Giant Magneto-Resistance sensor with embedded composite film'20077,187,524'Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process'20077,161,771'Dual spin valve sensor with a longitudinal bias stack'20077,133,264'High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head'20067,133,263'Magnetoresistive sensor having a self aligned lead overlay structure and method of fabrication thereof'20067,126,796'Read sensor with overlaying lead layer top surface portions interfaced by hard bias and tapered lead layers'20067,062,838'Method of forming an embedded read element'20067,054,085'Use of shunt resistor with large RA product tunnel barriers'20067,020,951'Method of making a merged magnetic read head and write head'20066,989,971'Giant magnetoresistance (GMR) read head with reactive-ion-etch defined read width and fabrication process'20066,937,448'Spin valve having copper oxide spacer layer with specified coupling field strength between multi-layer free and pinned layer structures'20056,910,259'Method of making a spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap'20056,901,781'Steering wheel lock'20056,896,975'Spin-valve sensor with pinning layers comprising multiple antiferromagnetic films'20056,876,525'Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process'20056,873,499'Read head having high resistance soft magnetic flux guide layer for enhancing read sensor efficiency'20056,822,838'Dual magnetic tunnel junction sensor with a longitudinal bias stack'20046,788,499'Spin valve sensor with insulating and conductive seed layers'20046,785,099'Read gap improvements through high resistance magnetic shield layers'20046,780,524'In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture'20046,775,111'Trilayer seed layer structure for spin valve sensor'20046,747,852'Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer'20046,735,058'Current-perpendicular-to-plane read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead layer'20046,731,477'Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication'20046,709,767'In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture'20046,592,725'Fabrication method for spin valve sensor with insulating and conducting seed layers'20036,521,098'Fabrication method for spin valve sensor with insulating and conducting seed layers'20036,519,120'Ap-pinned spin valves with enhanced GMR and thermal stability'20036,411,476'Trilayer seed layer structure for spin valve sensor'20026,401,503'Vehicle steering wheel lock'20026,262,869'Spin valve sensor with encapsulated keeper layer and method of making'20016,223,420'Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency'20016,185,078'Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap'20016,175,477'Spin valve sensor with nonmagnetic oxide seed layer'20016,175,475'Fully-pinned, flux-closed spin valve'20016,162,582'Method of making a high resolution lead to shield short-resistant read head'20006,141,191'Spin valves with enhanced GMR and thermal stability'20006,127,053'Spin valves with high uniaxial anisotropy reference and keeper layers'20006,117,569'Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers'20006,074,767'Spin valve magnetoresistive head with two sets of ferromagnetic/antiferromagnetic films having high blocking temperatures and fabrication method'20006,033,491'Fabrication process of Ni-Mn spin valve sensor'20006,030,753'Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads'20006,023,395'Magnetic tunnel junction magnetoresistive sensor with in-stack biasing'20005,993,566'Fabrication process of Ni-Mn spin valve sensor'19995,978,183'High resolution lead to shield short-resistant read head'19995,975,512'Device for turning long members'19995,949,623'Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads'19995,935,453'MR sensor having end regions with planar sides'19995,904,347'Device for turning long members'19995,768,071'Spin valve sensor with improved magnetic stability of the pinned layer'19985,701,223'Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor'19975,621,592'Magnetic head with magnetically stable shield layers and/or write poles'19975,528,440'Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element'19965,515,221'Magnetically stable shields for MR head'19965,508,866'Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer'19965,492,720'Method of manufacturing a magnetoresistive sensor'19965,436,778'Magnetoresistive sensor having antiferromagnetic exchange bias'19955,380,548'Method for fabricating a magnetoresistive sensor having antiferromagnetic layer'19955,315,468'Magnetoresistive sensor having antiferromagnetic layer for exchange bias'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2012Patents assigned to IBM (44)· patent assignee history
1994–1996Based in Campbell, CA, US· patent location history
1996–2015Based in Saratoga, CA, US· patent location history
1999–2005Based in Chiayi County, TW· patent location history
1999Based in Chiayi, TW· patent location history
2004–2010Patents assigned to HITACHI GLOBAL STORAGE TECH (37)· patent assignee history
2011–2015Patents assigned to LIN TSANN (14)· patent assignee history
2011–2012Patents assigned to HITACHI GLOBAL STORAGE TECH NL (8)· patent assignee history
2013–2015Patents assigned to HGST Netherlands BV (6)· patent assignee history
2018Based in Leuven, BE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM441994–2012
HITACHI GLOBAL STORAGE TECH372004–2010
LIN TSANNself142011–2015
HITACHI GLOBAL STORAGE TECH NL82011–2012
HGST Netherlands BV62013–2015
Locations
LocationPatentsSpan
Saratoga, California, US901996–2015
Campbell, California, US61994–1996
Chiayi County, TW31999–2005
Leuven, BE12018
Chiayi, TW11999