Inventor
Motoaki Iwaya
Inventor
Nagoya, JP
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers37%
H01LSemiconductor devices27%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B23KSoldering or unsoldering2%
C22CAlloys2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
H01BCables2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
11,088,512Nitride semiconductor element202110,833,223Group III nitride semiconductor light-emitting device and production method therefor202010,734,225Nitride semiconductor substrate and method for manufacturing same202010,593,831Nitride semiconductor multilayer film reflector and light-emitting device using the same202010,424,684MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving device20199,847,449Nitride semiconductor light-emitting device with periodic gain active layers20179,716,209'Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device'20179,666,753'Nitride semiconductor light emitting device and method of fabricating the same'20179,437,775'Nitride semiconductor light-emitting device'20169,099,597'Light emitting diode element with porous SiC emitting by donor acceptor pair'20159,029,174'Method for manufacturing semiconductor device'20158,941,136'Semiconductor light emitting element'20157,985,964'Light-emitting semiconductor device'20117,855,385'SiC crystal and semiconductor device'20107,756,189'Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element'20107,732,826'Semiconductor and method of semiconductor fabrication'20107,612,381'Method for fabricating a semiconductor device and semiconductor device'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2020Patents assigned to UNIV MEIJO (12)· patent assignee history
2009–2011Based in Inazawa, JP· patent location history
2010–2015Patents assigned to AKASAKI ISAMU (4)· patent assignee history
2010–2015Patents assigned to AMANO HIROSHI (4)· patent assignee history
2010–2015Patents assigned to IWAYA MOTOAKI (4)· patent assignee history
2010–2021Based in Nagoya-shi, JP· patent location history
2015Based in Aichi, JP· patent location history
2016–2020Based in Nagoya, JP· patent location history
2019–2021Patents assigned to ASAHI CHEMICAL IND (3)· patent assignee history
2019Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV MEIJO | 12 | 2009–2020 |
| AKASAKI ISAMU | 4 | 2010–2015 |
| AMANO HIROSHI | 4 | 2010–2015 |
| IWAYA MOTOAKIself | 4 | 2010–2015 |
| ASAHI CHEMICAL IND | 3 | 2019–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagoya, JP | 7 | 2016–2020 |
| Inazawa, JP | 4 | 2009–2011 |
| Aichi, JP | 3 | 2015 |
| Nagoya-shi, JP | 2 | 2010–2021 |
| Tokyo, JP | 1 | 2019 |