Inventor
Jeonghyun Hwang
Inventor
Ithaca, NY, US
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10HInorganic light-emitting semiconductor devices having potential barriers22%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
7,993,938'Highly doped III-nitride semiconductors'20117,622,322'Method of forming an AlN coated heterojunction field effect transistor'20097,485,901'Highly doped III-nitride semiconductors'20097,482,191'Highly doped III-nitride semiconductors'20096,953,740'Highly doped III-nitride semiconductors'20056,888,170'Highly doped III-nitride semiconductors'20055,670,414'Graded-gap process for growing a SiC/Si heterojunction structure'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997Patents assigned to NAT SCIENCE COUNCIL (1)· patent assignee history
1997Based in Tainan, TW· patent location history
2005–2011Patents assigned to CORNELL RES FOUNDATION INC (6)· patent assignee history
2005–2011Based in Ithaca, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CORNELL RES FOUNDATION INC | 6 | 2005–2011 |
| NAT SCIENCE COUNCIL | 1 | 1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ithaca, New York, US | 6 | 2005–2011 |
| Tainan, TW | 1 | 1997 |