Inventor
Isaiah O. Oladeji
Inventor
Gotha, FL, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices18%
C23CCoating metallic material14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification13%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy11%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
Y02PClimate change mitigation technologies in the production or processing of goods9%
H01BCables4%
PatentTitleYear
9,666,870'Composite electrodes for lithium ion battery and method of making'20179,017,777'Inorganic films using a cascaded source for battery devices'20158,808,405'Method of forming a solid state cathode for high energy density secondary batteries'20148,465,556'Method of forming a solid state cathode for high energy density secondary batteries'20138,414,971'Zinc oxide film and method for making'20138,372,163'Method of forming solid state electrolyte having high lithium ion conduction and battery incorporating same'20138,349,498'Method of forming solid state electrolyte having high lithium ion conduction and battery incorporating same'20138,225,744'Method for fabricating copper-containing ternary and quaternary chalcogenide thin films'20128,022,548'Method for fabricating conducting plates for a high-Q MIM capacitor'20117,972,899'Method for fabricating copper-containing ternary and quaternary chalcogenide thin films'20117,793,611'Film growth system and method'20107,776,705'Method for fabricating a thick copper line and copper inductor resulting therefrom'20107,700,161'Film growth system and method'20107,601,604'Method for fabricating conducting plates for a high-Q MIM capacitor'20097,067,419'Mask layer and dual damascene interconnect structure in a semiconductor device'20066,686,662'Semiconductor device barrier layer'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2006Patents assigned to AGERE SYSTEMS INC (2)· patent assignee history
2004Based in Singapore, SG· patent location history
2006Based in Orlando, FL, US· patent location history
2009–2011Patents assigned to ATMEL CORP (3)· patent assignee history
2009–2017Based in Gotha, FL, US· patent location history
2010–2013Patents assigned to SISOM THIN FILMS LLC (8)· patent assignee history
2012–2014Patents assigned to OLADEJI ISAIAH O (6)· patent assignee history
2014–2017Patents assigned to QUANTUMSCAPE CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SISOM THIN FILMS LLC | 8 | 2010–2013 |
| OLADEJI ISAIAH Oself | 6 | 2012–2014 |
| ATMEL CORP | 3 | 2009–2011 |
| QUANTUMSCAPE CORP | 3 | 2014–2017 |
| AGERE SYSTEMS INC | 2 | 2004–2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gotha, Florida, US | 14 | 2009–2017 |
| Orlando, Florida, US | 1 | 2006 |
| Singapore, SG | 1 | 2004 |