Inventor
Hyon-Jong Cho
Inventor
Gumi-si, KR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth44%
Y10TTechnical subjects covered by former us classification31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
PatentTitleYear
8,753,445'Apparatus for growing high quality silicon single crystal ingot and growing method using the same'20148,574,362'Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot'20138,216,372'Apparatus for growing high quality silicon single crystal ingot and growing method using the same'20128,114,216'Semiconductor single crystal growth method having improvement in oxygen concentration characteristics'20127,799,130'Silicon single crystal ingot and wafer, growing apparatus and method thereof'20107,608,145'Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby'20097,559,988'Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot'20097,427,325'Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby'20087,416,603'High quality single crystal and method of growing the same'20087,378,071'Silicon wafer and method for producing silicon single crystal'20087,371,283'Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby'20087,326,292'Quality evaluation method for single crystal ingot'20087,229,495'Silicon wafer and method for producing silicon single crystal'20076,858,077'Single crystalline silicon wafer, ingot, and producing method thereof'20056,574,264'Apparatus for growing a silicon ingot'20036,527,859'Apparatus for growing a single crystalline ingot'20036,521,316'single crystalline silicon wafer, ingot, and producing method thereof'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2014Patents assigned to SILTRON INC (17)· patent assignee history
2003–2005Based in Bucheon-si, KR· patent location history
2007–2013Based in Gumi-si, KR· patent location history
2008–2014Based in Gyeongsangbuk-do, KR· patent location history
2012–2014Patents assigned to CHO HYON-JONG (4)· patent assignee history
2012–2013Patents assigned to HONG YOUNG-HO (2)· patent assignee history
2012–2013Patents assigned to LEE HONG-WOO (2)· patent assignee history
2012–2013Patents assigned to SHIN SEUNG-HO (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SILTRON INC | 17 | 2003–2014 |
| CHO HYON-JONGself | 4 | 2012–2014 |
| HONG YOUNG-HO | 2 | 2012–2013 |
| LEE HONG-WOO | 2 | 2012–2013 |
| SHIN SEUNG-HO | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gumi-si, KR | 10 | 2007–2013 |
| Bucheon-si, KR | 4 | 2003–2005 |
| Gyeongsangbuk-do, KR | 3 | 2008–2014 |