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Inventor

Takeshi Eri

Inventor
Hitachi, JP

Overview

4→
Patents
2010–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
H10HInorganic light-emitting semiconductor devices having potential barriers20%
H10DInorganic electric semiconductor devices10%
PatentTitleYear
8,466,471'Nitride semiconductor free-standing substrate and method for making same'20138,310,029'Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same'20128,102,026'Group-III nitride semiconductor freestanding substrate and manufacturing method of the same'20127,829,913'Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2013Patents assigned to HITACHI CABLE (4)· patent assignee history
2010Patents assigned to NEC CORP (1)· patent assignee history
2010Based in Tokyo, JP· patent location history
2012–2013Patents assigned to ERI TAKESHI (3)· patent assignee history
2012–2013Patents assigned to MEGURO TAKESHI (2)· patent assignee history
2012Patents assigned to FUJIKURA HAJIME (1)· patent assignee history
2012–2013Based in Hitachi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI CABLE42010–2013
ERI TAKESHIself32012–2013
MEGURO TAKESHI22012–2013
FUJIKURA HAJIME12012
NEC CORP12010
Locations
LocationPatentsSpan
Hitachi, JP32012–2013
Tokyo, JP12010