Inventor
Harianto Wong
Inventor
Southborough, MA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices16%
H10NElectric solid-state devices not otherwise provided for13%
G01RMeasuring electric variables9%
H01GCapacitors6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10BElectronic memory devices3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%
PatentTitleYear
10,868,240Electronic circuit structure and method of fabricating electronic circuit structure having magnetoresistance element with improved electrical contacts202010,622,549Signal isolator having interposer202010,593,869Methods for patterning a magnetic sensing layer202010,352,969Systems and methods for integrated shielding in a current sensor201910,162,020Hall effect sensing element20189,865,807'Packaging for an electronic device'20189,857,437'Hall effect sensing element'20189,318,481'Electrostatic discharge protection device'20169,190,606'Packaging for an electronic device'20159,136,060'Precision high-frequency capacitor formed on semiconductor substrate'2015D0719115'Housing for an electronic device'20148,384,183'Integrated hall effect element having a germanium hall plate'20138,324,711'Precision high-frequency capacitor formed on semiconductor substrate'20128,004,063'Precision high-frequency capacitor formed on semiconductor substrate'20117,151,036'Precision high-frequency capacitor formed on semiconductor substrate'20066,621,142'Precision high-frequency capacitor formed on semiconductor substrate'20036,621,143'Precision high-frequency capacitor on semiconductor substrate'20036,538,300'Precision high-frequency capacitor formed on semiconductor substrate'20036,069,082'Method to prevent dishing in damascene CMP process'20006,017,803'Method to prevent dishing in chemical mechanical polishing'20005,956,137'In-line process monitoring using micro-raman spectroscopy'19995,869,396'Method for forming a polycide gate electrode'19995,731,239'Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2000Patents assigned to CHARTERED SEMICONDUCTOR MFG (5)· patent assignee history
1998–2000Based in Singapore, SG· patent location history
2003–2012Patents assigned to VISHAY INTERTECHNOLOGY INC (5)· patent assignee history
2003–2012Based in Santa Clara, CA, US· patent location history
2012–2015Patents assigned to WONG HARIANTO (5)· patent assignee history
2013–2020Based in Southborough, MA, US· patent location history
2014–2020Patents assigned to ALLEGRO MICROSYSTEMS LLC (9)· patent assignee history
2014–2015Patents assigned to DAVID PAUL (2)· patent assignee history
2015Based in Santa Monica, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ALLEGRO MICROSYSTEMS LLC | 9 | 2014–2020 |
| CHARTERED SEMICONDUCTOR MFG | 5 | 1998–2000 |
| VISHAY INTERTECHNOLOGY INC | 5 | 2003–2012 |
| WONG HARIANTOself | 5 | 2012–2015 |
| DAVID PAUL | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Southborough, Massachusetts, US | 11 | 2013–2020 |
| Santa Clara, California, US | 6 | 2003–2012 |
| Singapore, SG | 5 | 1998–2000 |
| Santa Monica, California, US | 1 | 2015 |