LexDanaLexDanabeta
Inventor

Keiji Ishibashi

Inventor
Itami, JP

Overview

72→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 72 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
C30BSingle-crystal growth14%
H10DInorganic electric semiconductor devices14%
H01LSemiconductor devices11%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y10TTechnical subjects covered by former us classification6%
C23CCoating metallic material5%
G01BMeasuring length, thickness or similar linear dimensions3%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
PatentTitleYear
10,844,470Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device202010,600,676Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device202010,186,451Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device201910,113,248Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same201810,078,059Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same20189,923,063'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20189,917,004'Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device'20189,728,612'Silicon carbide substrate, semiconductor device and methods for manufacturing them'20179,722,028'Silicon carbide substrate, semiconductor device, and methods for manufacturing them'20179,708,735'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20179,570,540'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20179,499,925'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20169,490,132'Substrate, semiconductor device, and method of manufacturing the same'20169,484,416'Silicon carbide substrate, semiconductor device and methods for manufacturing them'20169,437,690'Silicon carbide substrate, semiconductor device, and methods for manufacturing them'20169,324,814'Silicon carbide single-crystal substrate'20169,318,563'Silicon carbide single-crystal substrate'20169,312,340'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20169,312,165'Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device'20169,299,890'III nitride semiconductor substrate, epitaxial substrate, and semiconductor device'20169,252,322'Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device'20169,184,246'Silicon carbide substrate, semiconductor device, and methods for manufacturing them'20159,136,337'Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same'20159,117,758'Substrate, semiconductor device, and method of manufacturing the same'20159,105,756'Silicon carbide substrate, semiconductor device, and methods for manufacturing them'20159,093,384'Substrate, semiconductor device, and method of manufacturing the same'20159,070,828'III nitride semiconductor substrate, epitaxial substrate, and semiconductor device'20159,035,429'Group III nitride crystal substrate'20158,975,643'Silicon carbide single-crystal substrate and method for manufacturing same'20158,952,494'Group III nitride semiconductor substrate having a sulfide in a surface layer'20158,871,647'Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate'20148,872,189'Substrate, semiconductor device, and method of manufacturing the same'20148,853,670'III nitride semiconductor substrate, epitaxial substrate, and semiconductor device'20148,841,215'Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method'20148,828,140'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20148,771,552'Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same'20148,586,998'Silicon carbide substrate manufacturing method and silicon carbide substrate'20138,471,364'Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate'20138,338,299'Method of processing a surface of group III nitride crystal and group III nitride crystal substrate'20128,283,694'GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20128,242,498'Compound semiconductor substrate, semiconductor device, and processes for producing them'20128,228,963'Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer'20128,192,543'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20128,183,669'Nitride semiconductor wafer having a chamfered edge'20128,115,927'Production method of compound semiconductor member'20128,101,968'Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20128,101,523'Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device'20128,030,681'Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate'20117,981,216'Vacuum processing apparatus'20117,973,322'Nitride semiconductor light emitting device and method for forming the same'20117,919,343'Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof'20117,901,960'Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device'20117,883,775'Diamond film coated tool and process for producing the same'20117,872,331'Nitride semiconductor wafer'20117,863,609'Compound semiconductor substrate, semiconductor device, and processes for producing them'20117,854,804'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20107,851,381'Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device'20107,846,810'Method of measuring warpage of rear surface of substrate'20107,816,238'GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate'20107,771,701'Hydrogen atom generation source in vacuum treatment apparatus, and hydrogen atom transportation method'20107,662,239'Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers'20107,507,668'Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate'20097,494,892'Method of measuring warpage of rear surface of substrate'20097,416,604'Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same'20087,387,989'AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate'20087,211,152'Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system'20076,955,836'Silicon oxide film formation method'20056,942,892'Hot element CVD apparatus and a method for removing a deposited film'20056,661,152'Diamond substrate for surface acoustic wave device, and surface acoustic wave device'20036,593,548'Heating element CVD system'20036,375,756'Method for removing a deposited film'20026,365,009'Combined RF-DC magnetron sputtering method'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2007Patents assigned to ANELVA CORP (5)· patent assignee history
2002–2005Based in Tokyo, JP· patent location history
2003–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (62)· patent assignee history
2003–2020Based in Itami, JP· patent location history
2007–2011Based in Fuchu, JP· patent location history
2010–2020Patents assigned to CANON ANELVA CORP (4)· patent assignee history
2010–2018Based in Hyogo, JP· patent location history
2010–2020Based in Kawasaki, JP· patent location history
2012–2017Patents assigned to ISHIBASHI KEIJI (19)· patent assignee history
2012–2014Patents assigned to NISHIURA TAKAYUKI (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES622003–2020
ISHIBASHI KEIJIself192012–2017
ANELVA CORP52002–2007
CANON ANELVA CORP42010–2020
NISHIURA TAKAYUKI42012–2014
Locations
LocationPatentsSpan
Itami, JP552003–2020
Hyogo, JP72010–2018
Tokyo, JP42002–2005
Kawasaki, JP22010–2020
Fuchu, JP22007–2011