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Inventor

NENG-TAI SHIH

Inventor
TW

Overview

2→
Patents
2023–2025
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices20%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light20%
H10HInorganic light-emitting semiconductor devices having potential barriers20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
12,295,185Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate202511,735,540Apparatuses including dummy dice2023

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2023Patents assigned to MICRON TECHNOLOGY INC (1)· patent assignee history
2023–2025Based in TW· patent location history
2025Patents assigned to WANG HSIAO LEI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC12023
WANG HSIAO LEI12025
Locations
LocationPatentsSpan
TW22023–2025