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Inventor

Gerald W. Gibson

Inventor
Danbury, CT, US

Overview

21→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices18%
H01JElectric discharge tubes or discharge lamps11%
H01LSemiconductor devices11%
H10NElectric solid-state devices not otherwise provided for7%
B82YSpecific uses or applications of nanostructures4%
Y10TTechnical subjects covered by former us classification4%
C23CCoating metallic material2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
11,133,452Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits202110,381,542Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits201910,199,554Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits20199,564,573'Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits'20178,853,856'Methodology for evaluation of electrical characteristics of carbon nanotubes'20148,828,749'Methodology for evaluation of electrical characteristics of carbon nanotubes'20148,449,781'Selective etch back process for carbon nanotubes intergration'20137,994,639'Microelectronic structure including dual damascene structure and high contrast alignment mark'20117,981,305'High-density field emission elements and a method for forming said emission elements'20117,695,897'Structures and methods for low-k or ultra low-k interlayer dielectric pattern transfer'20107,632,690'Real-time gate etch critical dimension control by oxygen monitoring'20097,564,178'High-density field emission elements and a method for forming said emission elements'20097,332,775'Protruding spacers for self-aligned contacts'20087,261,745'Real-time gate etch critical dimension control by oxygen monitoring'20077,126,198'Protruding spacers for self-aligned contacts'20067,087,498'Method for controlling trench depth in shallow trench isolation features'20066,879,046'Split barrier layer including nitrogen-containing portion and oxygen-containing portion'20056,798,043'Structure and method for isolating porous low-k dielectric films'20046,680,542'Damascene structure having a metal-oxide-metal capacitor associated therewith'20046,362,094'Hydrogenated silicon carbide as a liner for self-aligning contact vias'20026,110,395'Method and structure for controlling plasma uniformity'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000Based in Simi Valley, CA, US· patent location history
2002–2008Based in Orlando, FL, US· patent location history
2004–2011Patents assigned to AGERE SYSTEMS INC (10)· patent assignee history
2006–2021Based in Danbury, CT, US· patent location history
2010–2021Patents assigned to IBM (9)· patent assignee history
2013–2014Patents assigned to DARNON MAXIME (3)· patent assignee history
2013–2014Patents assigned to GIBSON GERALD W (3)· patent assignee history
2013–2014Patents assigned to JOSHI PRATIK P (3)· patent assignee history
2013–2014Based in Yorktown Heights, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AGERE SYSTEMS INC102004–2011
IBM92010–2021
DARNON MAXIME32013–2014
GIBSON GERALD Wself32013–2014
JOSHI PRATIK P32013–2014
Locations
LocationPatentsSpan
Danbury, CT, US122006–2021
Orlando, Florida, US62002–2008
Yorktown Heights, New York, US22013–2014
Simi Valley, California, US12000