Inventor
Jürgen Faul
Inventor
Radebeul, DE
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices29%
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01LSemiconductor devices7%
G05FSystems for regulating electric or magnetic variables4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
10,775,826Back-gate biasing voltage divider topology circuit structure202010,141,229Process for forming semiconductor layers of different thickness in FDSOI technologies20189,773,811'Reducing antenna effects in SOI devices'20177,679,120'Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure'20107,259,060'Method for fabricating a semiconductor structure'20077,118,955'Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure'20067,078,325'Process for producing a doped semiconductor substrate'20066,967,133'Method for fabricating a semiconductor structure'20056,943,116'Method for fabricating a p-channel field-effect transistor on a semiconductor substrate'20056,828,191'Trench capacitor with an insulation collar and method for producing a trench capacitor'20046,664,167'Memory with trench capacitor and selection transistor and method for fabricating it'20036,509,599'Trench capacitor with insulation collar and method for producing the trench capacitor'20036,326,262'Method for fabricating epitaxy layer'20016,174,741'Method for quantifying proximity effect by measuring device performance'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2007Patents assigned to INFINEON TECHNOLOGIES AG (7)· patent assignee history
2001–2004Patents assigned to SIEMENS AG (3)· patent assignee history
2001–2020Based in Radebeul, DE· patent location history
2010Patents assigned to QIMONDA AG (1)· patent assignee history
2017–2020Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
2017Based in Dresden, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 7 | 2001–2007 |
| GLOBALFOUNDRIES INC | 3 | 2017–2020 |
| SIEMENS AG | 3 | 2001–2004 |
| QIMONDA AG | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Radebeul, DE | 13 | 2001–2020 |
| Dresden, DE | 1 | 2017 |