Inventor

Jean Giess

Inventor

Malvern, GB

Overview

4→

Patents

1986–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth21%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

C23CCoating metallic material7%

H10DInorganic electric semiconductor devices7%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%

PatentTitleYear

8,021,914'Manufacture of cadmium mercury telluride'2011 7,892,879'Manufacture of cadmium mercury telluride on patterned silicon'2011 4,950,621'Method of growing crystalline layers by vapor phase epitaxy'1990 4,566,918'Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1990Patents assigned to SECR DEFENCE BRIT (2)· patent assignee history

1986Based in Colwall, GB· patent location history

1990–2011Based in Malvern, GB· patent location history

2011Patents assigned to QINETIQ LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
QINETIQ LTD	2	2011
SECR DEFENCE BRIT	2	1986–1990

Locations

Location	Patents	Span
Malvern, GB	3	1990–2011
Colwall, GB	1	1986