Inventor
Satoshi Inaba
Inventor
Yokohama, JP
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10BElectronic memory devices18%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H01LSemiconductor devices4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification3%
A01NPreservation of bodies of humans or animals or plants or parts thereof2%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
C08JWorking-up2%
PatentTitleYear
10,821,835Self-cooled reactor apparatus202010,311,929Resistance change memory20199,773,838'Magnetoresistive memory device and manufacturing method of the same'20179,542,988'Semiconductor memory device'20179,515,183'Semiconductor device including buried-gate MOS transistor with appropriate stress applied thereto'20169,450,059'Semiconductor device and method of manufacturing the same'20168,569,867'Semiconductor device'20138,481,908'Solid-state imaging device'20138,405,159'Semiconductor device'20138,368,148'Semiconductor device'20138,338,889'Semiconductor device and method of manufacturing semiconductor device'20128,329,592'Method of fabricating semiconductor device, and photomask'20128,169,009'Semiconductor device'20128,129,798'Semiconductor device comprising fully-depleted and partially-depleted FinFETs'20128,053,292'Semiconductor device and method of manufacturing semiconductor device'20118,039,843'Semiconductor wafer, semiconductor device and method of fabricating the same'20118,035,170'Semiconductor device including SRAM'20117,994,583'Semiconductor device including n-type and p-type FinFET\'s constituting an inverter structure'20117,989,856'Fin transistor'20117,983,072'Semiconductor device'20117,923,788'Semiconductor device'20117,795,682'Semiconductor device and method manufacturing semiconductor device'20107,750,381'Semiconductor device and method of manufacturing semiconductor device'20107,723,822'MEMS element having a dummy pattern'20107,643,331'Semiconductor device'20107,522,445'Semiconductor memory'20097,456,472'Semiconductor device and manufacturing method thereof'20087,456,481'Semiconductor device and manufacturing method of the same'20087,449,733'Semiconductor device and method of fabricating the same'20087,400,016'Semiconductor device realizing characteristics like a SOI MOSFET'20087,259,428'Semiconductor device using SOI structure having a triple-well region'20077,215,569'Semiconductor integrated circuit device and method of manufacturing the same'20077,125,779'Semiconductor device and method of manufacturing the same'20067,112,858'Semiconductor device and manufacturing method of the same'20066,930,361'Semiconductor device realizing characteristics like a SOI MOSFET'20056,919,601'Semiconductor device with gate electrode formed on each of three side surfaces of an active layer, and manufacturing method thereof'20056,878,599'Semiconductor device and method of manufacturing the same'20056,844,247'Semiconductor device and method of manufacturing the same'20056,828,203'Semiconductor device and method of manufacturing the same'20046,541,357'Semiconductor device and method of manufacturing the same'20036,525,403'Semiconductor device having MIS field effect transistors or three-dimensional structure'20036,448,618'Semiconductor device and method for manufacturing the same'20026,329,258'Semiconductor device and method of manufacturing the same'20016,300,197'Method of fabricating semiconductor device'20016,153,476'Semiconductor device and method for manufacturing the same'20005,739,575'Dielectrically isolated substrate and method for manufacturing the same'19985,698,869'Insulated-gate transistor having narrow-bandgap-source'19975,675,176'Semiconductor device and a method for manufacturing the same'19975,658,915'Polyelectrolyte complex antibacterial agent and antibacterial material'19975,578,598'Polyelectrolyte complex antibacterial agent in antibacterial material'19965,492,815'Method of determining glucose-6-phosphate and composition therefor'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–1997Patents assigned to IATRON LAB (3)· patent assignee history
1996–2020Based in Tokyo, JP· patent location history
1997–2017Patents assigned to TOSHIBA KK (45)· patent assignee history
2000–2013Based in Yokohama, JP· patent location history
2001–2006Based in Peekskill, NY, US· patent location history
2007–2013Based in Kanagawa, JP· patent location history
2012–2016Patents assigned to INABA SATOSHI (10)· patent assignee history
2013Patents assigned to ADACHI KANNA (1)· patent assignee history
2016–2019Based in Seongnam-si, KR· patent location history
2017–2019Patents assigned to TOSHIBA MEMORY CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 45 | 1997–2017 |
| INABA SATOSHIself | 10 | 2012–2016 |
| IATRON LAB | 3 | 1996–1997 |
| TOSHIBA MEMORY CORP | 2 | 2017–2019 |
| ADACHI KANNA | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 25 | 2000–2013 |
| Kanagawa, JP | 9 | 2007–2013 |
| Tokyo, JP | 7 | 1996–2020 |
| Seongnam-si, KR | 5 | 2016–2019 |
| Peekskill, New York, US | 4 | 2001–2006 |