Inventor
Chia-Hua Chu
Inventor
Zhubei City, TW
Overview
Patents· 148 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B81Cprimary
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems26%
B81BMicrostructural devices or systems, e.g. micromechanical devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices6%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers3%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock2%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,865,099MEMS device and method for forming the same202010,850,976Method of making ohmic contact on low doped bulk silicon for optical alignment202010,779,100Method for manufacturing a microphone202010,752,497Semiconductor structure for MEMS device202010,745,271Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer202010,715,924MEMS microphone having diaphragm202010,689,247Method and structure for CMOS-MEMS thin film encapsulation202010,618,804Manufacturing method of semiconductor structure including heater202010,609,463Integrated microphone device and manufacturing method thereof202010,541,627MEMS structure and method of forming same202010,526,196Structure and formation method of semiconductor device structure202010,519,032MEMS pressure sensor and microphone devices having through-vias and methods of forming same201910,520,467CMOS compatible BioFET201910,513,429Integration scheme for microelectromechanical systems (MEMS) devices and complementary metal-oxide-semiconductor (CMOS) devices201910,508,345Sensor in an internet-of-things and manufacturing method of the same201910,508,027CMOS-MEMS structure and method of forming the same201910,508,029MEMS integrated pressure sensor devices and methods of forming same201910,494,252MEMS devices and methods of manufacturing the same201910,495,138Hinge assembly with compressible sleeve201910,486,964Method for forming a micro-electro mechanical system (MEMS) including bonding a MEMS substrate to a CMOS substrate via a blocking layer201910,472,233Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer201910,457,550MEMS devices and methods of forming same201910,351,417MEMS device with viewer window and manufacturing method thereof201910,273,144Multi-pressure MEMS package201910,273,148Micro-electro-mechanical system and manufacturing method thereof201910,160,639Semiconductor structure for MEMS Device201810,160,640Mechanisms for forming micro-electro mechanical system device201810,160,633MEMS devices and fabrication methods thereof201810,155,659Vacuum sealed MEMS and CMOS package201810,155,655MEMS devices and fabrication methods thereof201810,145,847Method for forming biochips and biochips with non-organic landings for improved thermal budget201810,138,116Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer201810,131,541MEMS devices having tethering structures201810,134,552Method for fabricating MEMS switch with reduced dielectric charging effect201810,101,292MEMS humidity sensor and method of manufacturing the same201810,099,919MEMS devices and methods of forming same201810,087,071Semiconductor structure and manufacturing method thereof201810,087,069Semiconductor devices with moving members and methods for making the same201810,071,905Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same201810,065,852MEMS device and manufacturing method thereof201810,046,965CMOS-MEMS structure and method of forming the same201810,035,700Semiconductor structure and manufacturing method thereof201810,017,378MEMS pressure sensor and microphone devices having through-vias and methods of forming same201810,017,382MEMS integrated pressure sensor devices and methods of forming same20189,998,843Method for manufacturing a microphone20189,981,841MEMS integrated pressure sensor and microphone devices and methods of forming same20189,975,762Stacked semiconductor structure and method of forming the same20189,938,138MEMS device structure with a capping structure20189,933,388Integrated biosensor20189,910,009'CMOS compatible BioFET'20189,873,610Multiple bonding in wafer level packaging20189,868,628'Method and structure for CMOS-MEMS thin film encapsulation'20189,859,819'MEMS structure and method of forming same'20189,850,125MEMS integrated pressure sensor devices having isotropic cavitites and methods of forming same20179,822,000'MEMS and CMOS integration with low-temperature bonding'20179,796,582'Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer'20179,791,406'CMOS compatible BioFET'20179,776,856'Vacuum sealed MEMS and CMOS package'20179,725,301'Structures and formation methods of micro-electro mechanical system device'20179,718,669'MEMS pressure sensor and method of manufacturing the same'20179,695,039'Multi-pressure MEMS package'20179,691,725'Integrated semiconductor device and wafer level method of fabricating the same'20179,650,239'MEMS integrated pressure sensor and microphone devices and methods of forming same'20179,643,838'Semiconductor device and package and manufacturing method thereof'20179,630,837'MEMS structure and manufacturing method thereof'20179,630,831'Semiconductor sensing structure'20179,617,147'Dual layer microelectromechanical systems device and method of manufacturing same'20179,617,150'Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate'20179,604,843'MEMS devices and methods for forming same'20179,586,811'Semiconductor devices with moving members and methods for making the same'20179,573,806'MEMS device structure with a capping structure'20179,567,209'Semiconductor structure and manufacturing method thereof'20179,567,206'Structures and formation methods of micro-electro mechanical system device'20179,567,210'Multi-pressure MEMS package'20179,550,666'MEMS device with release aperture'20179,522,822'Sensor integration with an outgassing barrier and a stable electrical signal path'20169,511,997'MEMS device with a capping substrate'20169,505,605'Methods and apparatus for MEMS devices with increased sensitivity'20169,499,396'MEMS devices and methods of forming same'20169,487,391'Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate'20169,488,615'Biosensor with a sensing surface on an interlayer dielectric'20169,469,527'MEMS pressure sensor and microphone devices having through-vias and methods of forming same'20169,466,532'Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same'20169,462,402'Monolithic complementary metal-oxide semiconductor (CMOS)-integrated silicon microphone'20169,459,234'CMOS compatible BioFET'20169,459,224'Gas sensor, integrated circuit device using the same, and manufacturing method thereof'20169,452,924'MEMS devices and fabrication methods thereof'20169,450,109'MEMS devices and fabrication methods thereof'20169,403,673'Method for manufacturing a microelectromechanical systems (MEMS) device with different electrical potentials and an etch stop'20169,394,161'MEMS and CMOS integration with low-temperature bonding'20169,388,040'Stacked semiconductor device and method of forming the same related cases'20169,386,380'Method for the integration of a microelectromechanical systems (MEMS) microphone device with a complementary metal-oxide-semiconductor (CMOS) device'20169,337,168'Hermetic wafer level packaging'20169,337,182'Method to integrate different function devices fabricated by different process technologies'20169,309,109'MEMS-CMOS integrated devices, and methods of integration at wafer level'20169,293,431'Integrated semiconductor device and wafer level method of fabricating the same'20169,290,376'MEMS packaging techniques'20169,264,833'Structure and method for integrated microphone'20169,260,295'MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same'20169,260,296'MEMS integrated pressure sensor devices and methods of forming same'20169,254,997'CMOS-MEMS integrated flow for making a pressure sensitive transducer'20169,238,578'Semiconductor arrangement with stress release and thermal insulation'20169,233,839'MEMS device and method of forming the same'20169,221,674'Method for manufacturing a microelectromechanical systems (MEMS) device with different electrical potentials and an etch stop'20159,187,317'MEMS integrated pressure sensor and microphone devices and methods of forming same'20159,133,017'MEMS structure with adaptable inter-substrate bond'20159,130,531'Semiconductor arrangement with thermal insulation configuration'20159,123,547'Stacked semiconductor device and method of forming the same'20159,114,976'Semiconductor arrangement with stress release configuration'20159,096,420'Methods and apparatus for MEMS devices with increased sensitivity'20159,085,455'MEMS devices and methods for forming same'20159,079,761'Stacked semiconductor device and method of forming the same related cases'20159,065,358'MEMS structure and method of forming same'20159,040,334'MEMS integrated pressure sensor devices and methods of forming same'20159,035,451'Wafer level sealing methods with different vacuum levels for MEMS sensors'20159,029,961'Wafer level method of sealing different pressure levels for MEMS sensors'20159,006,015'Dual layer microelectromechanical systems device and method of manufacturing same'20158,987,059'MEMS devices and methods of forming same'20158,962,367'MEMS device with release aperture'20158,900,905'MEMS device and method of forming the same'20148,895,360'Integrated semiconductor device and wafer level method of fabricating the same'20148,846,416'Method for forming biochips and biochips with non-organic landings for improved thermal budget'20148,802,473'MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same'20148,797,127'MEMS switch with reduced dielectric charging effect'20148,763,220'Method of manufacturing a MEMS device'20148,748,205'MEMS structure with adaptable inter-substrate bond'20148,729,646'MEMS devices and methods for forming the same'20148,722,537'Multi-sacrificial layer and method'20148,723,123'Light detector with Ge film'20148,716,051'MEMS device with release aperture'20148,709,849'Wafer level packaging'20148,704,317'Microstructure device with an improved anchor'20148,648,468'Hermetic wafer level packaging'20148,633,554'MEMS device etch stop'20148,629,517'Wafer level packaging'20148,629,516'Bulk silicon moving member with dimple'20148,573,990'Cover structure'20138,569,808'Temperature stabilitized MEMS'20138,551,798'Microstructure with an enhanced anchor'20138,525,278'MEMS device having chip scale packaging'20138,486,744'Multiple bonding in wafer level packaging'20138,466,070'Methods of forming semiconductor structures'20138,410,665'MEMS kinetic energy conversion'20138,368,152'MEMS device etch stop'20138,343,789'Microstructure device with an improved anchor'20138,338,207'Bulk silicon moving member with dimple'20128,330,559'Wafer level packaging'20128,232,614'Package systems having a conductive element through a substrate thereof and manufacturing methods of the same'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (49)· patent assignee history
2012–2017Patents assigned to CHU CHIA-HUA (23)· patent assignee history
2012–2017Patents assigned to LIN CHUNG-HSIEN (15)· patent assignee history
2012–2016Patents assigned to CHENG CHUN-WEN (11)· patent assignee history
2012–2020Based in Zhubei City, TW· patent location history
2013–2019Based in Taipei, TW· patent location history
2014–2020Based in Hsinchu County, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (96)· patent assignee history
2017Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 96 | 2015–2020 |
| TAIWAN SEMICONDUCTOR MFG | 49 | 2012–2016 |
| CHU CHIA-HUAself | 23 | 2012–2017 |
| LIN CHUNG-HSIEN | 15 | 2012–2017 |
| CHENG CHUN-WEN | 11 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Zhubei City, TW | 118 | 2012–2020 |
| Hsinchu County, TW | 27 | 2014–2020 |
| Taipei, TW | 2 | 2013–2019 |
| Hsinchu, TW | 1 | 2017 |