Inventor
Hidetoshi Asamura
Inventor
Ibaraki, JP
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H01LSemiconductor devices14%
H10DInorganic electric semiconductor devices14%
Y10TTechnical subjects covered by former us classification14%
PatentTitleYear
8,986,448'Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method'20158,563,442'Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2015Patents assigned to AIR WATER INC (2)· patent assignee history
2013–2015Patents assigned to ASAMURA HIDETOSHI (2)· patent assignee history
2013–2015Patents assigned to KAWAMURA KEISUKE (2)· patent assignee history
2013Patents assigned to IZUMI KATSUTOSHI (1)· patent assignee history
2013Based in Sakai, JP· patent location history
2015Patents assigned to OBARA SATOSHI (1)· patent assignee history
2015Based in Ibaraki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIR WATER INC | 2 | 2013–2015 |
| ASAMURA HIDETOSHIself | 2 | 2013–2015 |
| KAWAMURA KEISUKE | 2 | 2013–2015 |
| IZUMI KATSUTOSHI | 1 | 2013 |
| OBARA SATOSHI | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ibaraki, JP | 1 | 2015 |
| Sakai, JP | 1 | 2013 |