Inventor
William L. Nicoll
Inventor
Pleasant Valley, NY, US
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices31%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,497,779Stacked nanowire semiconductor device201910,177,154Structure and method to prevent EPI short between trenches in FinFET eDRAM201910,153,340Stacked nanowire semiconductor device201810,121,855Stacked nanowire semiconductor device20189,960,168Capacitor strap connection structure and fabrication method20189,825,041'Integrated circuit structure with insulated memory device and related methods'20179,818,741'Structure and method to prevent EPI short between trenches in FINFET eDRAM'20179,607,993'Capacitor-transistor strap connections for a memory cell'20179,570,550'Stacked nanowire semiconductor device'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2019Patents assigned to IBM (6)· patent assignee history
2017–2018Patents assigned to GLOBALFOUNDRIES INC (3)· patent assignee history
2017–2019Based in Pleasant Valley, NY, US· patent location history
2017–2018Based in Hopewell Junction, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 6 | 2017–2019 |
| GLOBALFOUNDRIES INC | 3 | 2017–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pleasant Valley, New York, US | 7 | 2017–2019 |
| Hopewell Junction, New York, US | 2 | 2017–2018 |