LexDanaLexDanabeta
Inventor

Johji Nishio

Inventor
Tokyo, JP

Overview

62→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 62 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
B82YSpecific uses or applications of nanostructures6%
C30BSingle-crystal growth5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10TTechnical subjects covered by former us classification1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,998,401Semiconductor device having a base body of silicon carbide202110,930,732Semiconductor device including a silicon carbide layer202110,707,306Semiconductor device and method of manufacturing the same202010,680,058Semiconductor device having regions of different concentraton of lifetime killer impurity provided in a silicon carbide layer202010,546,932Semiconductor device, substrate, method for manufacturing semiconductor device, and method for manufacturing substrate202010,529,558Semiconductor device, substrate, method for manufacturing semiconductor device, and method for manufacturing substrate202010,424,640Semiconductor device and method of manufacturing the same201910,312,330Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device201910,177,009Manufacturing method for semiconductor device including first and second thermal treatments20199,941,361Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device20189,786,513'Manufacturing method for semiconductor device including first and second thermal treatments'20179,716,186'Semiconductor device manufacturing method, and semiconductor device'20179,653,553'Semiconductor substrate, semiconductor device and method of manufacturing semiconductor device'20179,559,172'Semiconductor device and method of manufacturing the same'20179,484,415'Semiconductor device and method for manufacturing the same'20169,412,823'Semiconductor device and method of manufacturing the same'20169,373,686'Semiconductor device and method for manufacturing same and semiconductor substrate'20169,324,787'Semiconductor device'20169,318,324'Manufacturing method of SiC epitaxial substrate, manufacturing method of semiconductor device, and semiconductor device'20169,236,434'Semiconductor device and manufacturing method thereof'20169,184,229'Semiconductor device and method for manufacturing same'20159,171,908'SiC semiconductor device and method of manufacturing the same'20159,111,844'Semiconductor device having silicon carbide epitaxial layers and method of manufacturing the same'20159,099,342'Transistor and method for manufacturing same'20159,093,362'Semiconductor device and method of manufacturing the same'20159,064,780'Semiconductor device'20159,064,779'Semiconductor rectifier'20159,029,869'Semiconductor device'20159,018,637'Transistor and method for manufacturing same'20159,012,923'Semiconductor device'20158,951,898'Method for manufacturing a silicon carbide DIMOSFET'20158,933,465'Semiconductor device'20158,933,464'SiC epitaxial wafer and semiconductor device'20158,835,288'Method of manufacturing silicon carbide semiconductor device'20148,823,148'Diode with epitaxially grown semiconductor layers'20148,686,436'Silicon carbide semiconductor device'20148,686,437'DIMOSFET SiC semiconductor device'20148,679,957'Method of manufacturing semiconductor device'20148,227,811'Semiconductor rectifying device'20128,012,837'Method of manufacturing semiconductor device'20117,977,210'Semiconductor substrate and semiconductor device'20117,947,988'Semiconductor device and method of manufacturing the same'20117,777,292'Semiconductor device'20107,508,045'SiC Schottky barrier semiconductor device'20096,627,552'Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same'20036,359,919'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'20026,303,405'Semiconductor light emitting element, and its manufacturing method'20016,204,084'Nitride system semiconductor device and method for manufacturing the same'20016,147,364'Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan'20006,121,634'Nitride semiconductor light emitting device and its manufacturing method'20006,118,801'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'20005,998,810'Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer'19995,987,048'Gallium nitride-based compound semiconductor laser and method of manufacturing the same'19995,932,896'Nitride system semiconductor device with oxygen'19995,903,017'Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN'19995,786,606'Semiconductor light-emitting device'19985,740,192'Semiconductor laser'19985,471,945'Method and apparatus for forming a semiconductor boule'19955,415,125'Method of forming a semiconductor boule'19955,400,742'Method of manufacturing compound semiconductor and apparatus'19955,041,186'Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas'19915,030,315'Methods of manufacturing compound semiconductor crystals and apparatus for the same'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2021Patents assigned to TOSHIBA KK (61)· patent assignee history
1991Based in Yokohama, JP· patent location history
1995–2017Based in Tokyo, JP· patent location history
1998–2002Based in Kawasaki, JP· patent location history
2001–2021Based in Machida, JP· patent location history
2012–2015Patents assigned to NISHIO JOHJI (7)· patent assignee history
2012–2015Patents assigned to MIZUKAMI MAKOTO (3)· patent assignee history
2014–2015Patents assigned to SHINOHE TAKASHI (6)· patent assignee history
2014–2015Patents assigned to KONO HIROSHI (4)· patent assignee history
2017Based in Machinda, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK611991–2021
NISHIO JOHJIself72012–2015
SHINOHE TAKASHI62014–2015
KONO HIROSHI42014–2015
MIZUKAMI MAKOTO32012–2015
Locations
LocationPatentsSpan
Tokyo, JP251995–2017
Machida, JP222001–2021
Kawasaki, JP111998–2002
Yokohama, JP21991
Machinda, JP12017