Inventor
Su-Jin Jung
Inventor
Hwaseong-si, KR
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C07DHeterocyclic compounds4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations2%
B60NSeats specially adapted for vehicles2%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
G06FElectric digital data processing2%
PatentTitleYear
10,727,348Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same202010,644,158Semiconductor device including fin field effect transistor and method of manufacturing the same202010,446,765Heterocyclic compound and organic light emitting element using same201910,411,702Electronic device including input apparatus201910,388,791Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same201910,297,601Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same201910,008,600Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations20189,972,716Semiconductor devices20189,761,719'Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrations'20179,755,076'Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices'20179,608,117'Semiconductor devices including a finFET'20179,595,611'FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistor'20179,553,192'Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices'20179,397,219'Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices'20169,275,995'Semiconductor devices having composite spacers containing different dielectric materials'20169,153,692'Semiconductor device having a stress film on a side surface of a fin'20158,853,010'Semiconductor device and method of fabricating the same'20148,672,386'Seat latch structure'20148,273,880'Pyrazole compounds with inhibitory activity against ROS kinase'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2018Patents assigned to JUNG SU JIN (3)· patent assignee history
2014–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (16)· patent assignee history
2014–2017Patents assigned to JUNG SU-JIN (3)· patent assignee history
2014–2017Patents assigned to LEE BYEONG-CHAN (3)· patent assignee history
2014–2017Patents assigned to KIM NAM-KYU (2)· patent assignee history
2015–2020Based in Hwaseong-si, KR· patent location history
2018Based in Asan-si, KR· patent location history
2019Based in Yongin, KR· patent location history
2019Based in Gyeongsangbuk-do, KR· patent location history
2020Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 16 | 2014–2020 |
| JUNG SU JINself | 3 | 2012–2018 |
| JUNG SU-JINself | 3 | 2014–2017 |
| LEE BYEONG-CHAN | 3 | 2014–2017 |
| KIM NAM-KYU | 2 | 2014–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 12 | 2015–2020 |
| Yongin-si, KR | 1 | 2020 |
| Yongin, KR | 1 | 2019 |
| Gyeongsangbuk-do, KR | 1 | 2019 |
| Asan-si, KR | 1 | 2018 |