LexDanaLexDanabeta
Inventor

Masatoshi Yoshikawa

Inventor
Yokohama, JP

Overview

110→
Patents
1998–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 110 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for19%
B82YSpecific uses or applications of nanostructures14%
G11BInformation storage based on relative movement between record carrier and transducer12%
H10BElectronic memory devices12%
H01FMagnets10%
G11CStatic stores9%
G01RMeasuring electric variables7%
H01LSemiconductor devices5%
Y10TTechnical subjects covered by former us classification5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,490,732Magnetic memory device with sidewall layer containing boron and manufacturing method thereof201910,461,245Magnetic memory device and method of manufacturing the same201910,388,855Magnetic memory device201910,388,854Magnetic memory device201910,304,509Magnetic storage device201910,230,042Magnetoresistive element and method of manufacturing the same201910,193,057Magnetic memory device201910,177,302Magnetic memory device including upper structure having first portion and second portion surrounding first portion and formed of material different from that of first portion, and method of manufacturing the same201910,147,761Semiconductor memory device with magnetoresistive element201810,043,853Magnetic memory device201810,020,444Magnetic memory device and method of manufacturing the same20189,893,121'Magnetic memory and method of manufacturing magnetic memory'20189,777,883'Superconducting magnet apparatus'20179,698,338'Magnetic memory device and method of manufacturing magnetic memory device'20179,595,663'Magnetic memory having magnetoresistive element and method of manufacturing magnetoresistive element'20179,570,671'Magnetic memory device'20179,508,922'Magnetic memory device and method of manufacturing the same'20169,425,388'Magnetic element and method of manufacturing the same'20169,406,871'Magnetoresistive element and method of manufacturing the same'20169,236,563'Magnetic memory device and method of manufacturing the magnetic memory device'20169,206,531'Iodine- and amylose-containing fibers, method for production thereof, and use thereof'20159,123,879'Magnetoresistive element and method of manufacturing the same'20159,093,632'Nonvolatile semiconductor memory device and method of manufacturing the same'20158,956,882'Method of manufacturing magnetoresistive element'20158,895,162'Magnetoresistive element and magnetic memory'20148,754,433'Semiconductor device and method of manufacturing the same'20148,741,161'Method of manufacturing semiconductor device'20148,716,818'Magnetoresistive element and method of manufacturing the same'20148,686,521'Magnetoresistive element and magnetic memory'20148,665,639'Magnetoresistive element and magnetic memory'20148,531,875'Magnetic memory'20138,363,462'Magnetoresistive element'20138,299,552'Magnetoresistive element and magnetic memory'20128,223,533'Magnetoresistive effect device and magnetic memory'20128,218,355'Magnetoresistive element and magnetic memory'20128,208,292'Magnetoresistive element and magnetic memory'20128,173,447'Magnetoresistive element and magnetic memory'20128,154,915'Magnetoresistive element and magnetoresistive random access memory including the same'20128,143,684'Magnetoresistive element'20128,139,405'Magnetoresistive element and magnetoresistive random access memory including the same'20128,107,281'Magnetoresistive element and magnetic memory'20128,098,514'Magnetoresistive element and magnetic memory'20128,085,511'Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer'20117,965,544'Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory'20117,957,184'Magnetoresistive element and magnetoresistive random access memory including the same'20117,924,607'Magnetoresistance effect element and magnetoresistive random access memory using the same'20117,920,361'Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc'20117,897,274'Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus'20117,898,846'Magnetoresistive element'20117,898,774'Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus'20117,894,246'Magnetoresistive element and magnetic memory'20117,848,059'Magnetoresistive effect device and magnetic random access memory using the same'20107,791,843'Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system'20107,787,288'Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory'20107,768,824'Magnetoresistive element and magnetoresistive random access memory including the same'20107,738,220'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20107,663,197'Magnetoresistive element'20107,596,015'Magnetoresistive element and magnetic memory'20097,564,109'MRAM and method of manufacturing the same'20097,561,383'Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system'20097,515,386'Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system'20097,511,927'Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus'20097,463,456'Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus'20087,443,004'Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus'20087,379,278'Magnetoresistance effect element, having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance'20087,375,405'Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element'20087,248,448'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20077,223,485'Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus'20077,218,483'Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus'20077,215,516'Magnetoresistive head having magnetoresistive film including free layer and pinned layer arranged in head height direction'20077,200,034'Magnetic memory device having yoke layer on write interconnection and method of manufacturing the same'20077,196,877'Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus'20077,190,613'Magnetic random access memory device having thermal agitation property and high write efficiency'20077,190,558'Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus'20077,145,754'Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of oxygen'20067,130,164'Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance'20067,126,795'Magnetic recording head, a magnetic reproducing head, a magnetic recording apparatus, and a magnetic reproducing apparatus'20067,116,529'Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus'20067,072,153'Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance'20067,071,522'Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus'20067,064,402'Magnetic random access memory'20067,061,732'Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus'20067,046,489'Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system'20067,038,893'Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance'20067,027,273'Magnetoresistive head with an intermediate layer between first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus'20067,016,169'Magnetoresistive head with first and second pairs of antiferromagnetic films imparting magnetic bias to first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus'20067,008,702'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20066,984,865'Magnetic random access memory'20066,937,446'Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system'20056,905,780'Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same'20056,850,393'Magnetic head including a magneto resistive film connected to a yoke portion'20056,847,509'Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus'20056,804,089'Yoke-type magnetic head and magnetic recording/reproducing device'20046,784,509'Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus'20046,754,053'Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus'20046,751,846'Magnetic head manufacturing method'20046,741,431'Magnetic head and magnetic recording/reproduction device'20046,724,582'Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus'20046,646,836'Superconducting magnet apparatus in persistent mode'20036,636,390'Magnetic head and magnetic recording and reproducing system'20036,606,225'Yoke-type magnetic head and device having a granular structure in which a non-magnetic and electrical insulating material surrounds magnetic particles'20036,564,445'Magnetic head manufacturing method'20036,495,275'Multi-layered thin-film functional device and magnetoresistance effect element'20026,338,899'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20026,307,708'Exchange coupling film having a plurality of local magnetic regions, magnetic sensor having the exchange coupling film, and magnetic head having the same'20016,303,218'Multi-layered thin-film functional device and magnetoresistance effect element'20016,285,531'Magnetic head with magneto-resistance effect element disposed on opposite side of magnetic core pair from recording coil'20016,256,171'Thin film magnetic head having an improved heat dispersion and magnetic recording apparatus using the same'20016,132,892'Soft magnetic alloy film and manufacturing method thereof, and magnetic head incorporating the same'20005,756,111'Process for producing articles of regenerated chitin-chitosan containing material and the resulting articles'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2017Patents assigned to TOSHIBA KK (90)· patent assignee history
2000–2002Based in Kawasaki, JP· patent location history
2001–2014Based in Yokohama, JP· patent location history
2001–2011Based in Kanagawa, JP· patent location history
2003–2017Based in Kobe, JP· patent location history
2011–2017Patents assigned to YOSHIKAWA MASATOSHI (29)· patent assignee history
2012–2017Patents assigned to YODA HIROAKI (17)· patent assignee history
2012–2016Patents assigned to NAGASE TOSHIHIKO (13)· patent assignee history
2012–2014Patents assigned to KITAGAWA EIJI (12)· patent assignee history
2015–2019Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK902000–2017
YOSHIKAWA MASATOSHIself292011–2017
YODA HIROAKI172012–2017
NAGASE TOSHIHIKO132012–2016
KITAGAWA EIJI122012–2014
Locations
LocationPatentsSpan
Yokohama, JP592001–2014
Seoul, KR222015–2019
Kanagawa, JP222001–2011
Kawasaki, JP32000–2002
Kobe, JP22003–2017