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Inventor

Ling Chen

Inventor
Sunnyvale, CA, US

Overview

77→
Patents
1999–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 77 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y10TTechnical subjects covered by former us classification8%
B01DSeparation5%
H01JElectric discharge tubes or discharge lamps2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H10DInorganic electric semiconductor devices1%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium1%
C30BSingle-crystal growth1%
PatentTitleYear
9,962,759Recessed screw, forming punch and driving tool20188,668,776'Gas delivery apparatus and method for atomic layer deposition'20148,318,266'Enhanced copper growth with ultrathin barrier layer for high performance interconnects'20128,293,328'Enhanced copper growth with ultrathin barrier layer for high performance interconnects'20128,070,879'Apparatus and method for hybrid chemical processing'20118,062,422'Method and apparatus for generating a precursor for a semiconductor processing system'20117,892,602'Cyclical deposition of refractory metal silicon nitride'20117,867,896'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20117,780,785'Gas delivery apparatus for atomic layer deposition'20107,780,788'Gas delivery apparatus for atomic layer deposition'20107,749,361'Multi-component doping of copper seed layer'20107,699,023'Gas delivery apparatus for atomic layer deposition'20107,678,194'Method for providing gas to a processing chamber'20107,658,970'Noble metal layer formation for copper film deposition'20107,597,758'Chemical precursor ampoule for vapor deposition processes'20097,591,907'Apparatus for hybrid chemical processing'20097,588,736'Apparatus and method for generating a chemical precursor'20097,576,002'Multi-step barrier deposition method'20097,569,191'Method and apparatus for providing precursor gas to a processing chamber'20097,547,644'Methods and apparatus for forming barrier layers in high aspect ratio vias'20097,524,374'Method and apparatus for generating a precursor for a semiconductor processing system'20097,514,358'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20097,507,660'Deposition processes for tungsten-containing barrier layers'20097,494,908'Apparatus for integration of barrier layer and seed layer'20097,429,361'Method and apparatus for providing precursor gas to a processing chamber'20087,422,637'Processing chamber configured for uniform gas flow'20087,404,985'Noble metal layer formation for copper film deposition'20087,402,210'Apparatus and method for hybrid chemical processing'20087,352,048'Integration of barrier layer and seed layer'20087,316,535'Screw with a convenient screw head'20087,270,709'Method and apparatus of generating PDMAT precursor'20077,262,133'Enhancement of copper line reliability using thin ALD tan film to cap the copper line'20077,244,683'Integration of ALD/CVD barriers with porous low k materials'20077,228,873'Valve design and configuration for fast delivery system'20077,204,886'Apparatus and method for hybrid chemical processing'20077,186,385'Apparatus for providing gas to a processing chamber'20077,081,271'Cyclical deposition of refractory metal silicon nitride'20067,066,194'Valve design and configuration for fast delivery system'20067,026,238'Reliability barrier integration for Cu application'20066,974,771'Methods and apparatus for forming barrier layers in high aspect ratio vias'20056,972,267'Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor'20056,958,296'CVD TiSiN barrier for copper integration'20056,955,211'Method and apparatus for gas temperature control in a semiconductor processing system'20056,953,742'Tantalum barrier layer for copper metallization'20056,939,801'Selective deposition of a barrier layer on a dielectric material'20056,936,906'Integration of barrier layer and seed layer'20056,916,398'Gas delivery apparatus and method for atomic layer deposition'20056,905,541'Method and apparatus of generating PDMAT precursor'20056,872,429'Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber'20056,838,125'Method of film deposition using activated precursor gases'20056,821,891'Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors'20046,811,814'Method for growing thin films by catalytic enhancement'20046,784,096'Methods and apparatus for forming barrier layers in high aspect ratio vias'20046,772,072'Method and apparatus for monitoring solid precursor delivery'20046,660,622'Process for removing an underlying layer and depositing a barrier layer in one reactor'20036,620,956'Nitrogen analogs of copper II -diketonates as source reagents for semiconductor processing'20036,607,976'Copper interconnect barrier layer structure and formation method'20036,596,643'CVD TiSiN barrier for copper integration'20036,596,085'Methods and apparatus for improved vaporization of deposition material in a substrate processing system'20036,562,715'Barrier layer structure for copper metallization and method of forming the structure'20036,498,091'Method of using a barrier sputter reactor to remove an underlying barrier layer'20026,436,192'Apparatus for aligning a wafer'20026,410,089'Chemical vapor deposition of copper using profiled distribution of showerhead apertures'20026,402,806'Method for unreacted precursor conversion and effluent removal'20026,358,323'Method and apparatus for improved control of process and purge material in a substrate processing system'20026,355,106'Deposition of copper with increased adhesion'20026,319,728'Method for treating a deposited film for resistivity reduction'20016,309,713'Deposition of tungsten nitride by plasma enhanced chemical vapor deposition'20016,291,343'Plasma annealing of substrates to improve adhesion'20016,276,295'Thermal reflow method employing microwave energy'20016,171,661'Deposition of copper with increased adhesion'20016,110,530'CVD method of depositing copper films by using improved organocopper precursor blend'20006,099,649'Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal'20006,063,440'Method for aligning a wafer'20006,050,506'Pattern of apertures in a showerhead for chemical vapor deposition'20005,989,999'Construction of a tantalum nitride film on a semiconductor wafer'19995,858,464'Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2014Patents assigned to APPLIED MATERIALS INC (74)· patent assignee history
1999–2014Based in Sunnyvale, CA, US· patent location history
2008Based in Gangshan Township, TW· patent location history
2010–2014Patents assigned to CHEN LING (6)· patent assignee history
2010–2011Patents assigned to CHANG MEI (3)· patent assignee history
2011–2014Patents assigned to CHUNG HUA (5)· patent assignee history
2011–2014Patents assigned to WU DIEN-YEH (3)· patent assignee history
2018Based in Tainan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC741999–2014
CHEN LINGself62010–2014
CHUNG HUA52011–2014
CHANG MEI32010–2011
WU DIEN-YEH32011–2014
Locations
LocationPatentsSpan
Sunnyvale, California, US751999–2014
Tainan, TW12018
Gangshan Township, TW12008