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Inventor

Cheng Hu

Inventor
Shanghai, CN

Overview

3→
Patents
2000–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
G01MTesting static or dynamic balance of machines or structures20%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
9,209,029'Asymmetrical gate MOS device and method of making'20157,430,897'Method and apparatus for detecting and locating gas leaks'20086,110,835'Method for fabricating an electrode structure for a cylindrical capacitor in integrated circuit'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000Patents assigned to UNITED MICROELECTRONICS CORP (1)· patent assignee history
2000Based in Kaohsiung, TW· patent location history
2008Patents assigned to CA NAT RESEARCH COUNCIL (1)· patent assignee history
2008Based in Vancouver, CA· patent location history
2015Patents assigned to HU CHENG (1)· patent assignee history
2015Patents assigned to UNIV FUDAN (1)· patent assignee history
2015Patents assigned to WU DONGPING (1)· patent assignee history
2015Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CA NAT RESEARCH COUNCIL12008
HU CHENGself12015
UNITED MICROELECTRONICS CORP12000
UNIV FUDAN12015
WU DONGPING12015
Locations
LocationPatentsSpan
Shanghai, CN12015
Vancouver, CA12008
Kaohsiung, TW12000