Inventor
Tsung Fan Yin
Inventor
Kaohsiung, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices29%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H01JElectric discharge tubes or discharge lamps8%
PatentTitleYear
11,049,756Thermal pad for etch rate uniformity202110,854,603Semiconductor device and method202010,692,762Semiconductor device with gate stack202010,269,917Method of forming a FinFET with work function tuning layers having stair-step increment sidewalls201910,199,252Thermal pad for etch rate uniformity201910,074,563Structure and formation method of interconnection structure of semiconductor device20189,865,697'Semiconductor device structure and method for forming the same'2018Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2018–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2018–2021Based in Kaohsiung, TW· patent location history
2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2018–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kaohsiung, TW | 6 | 2018–2021 |
| Hsinchu, TW | 1 | 2019 |