Inventor
Robert Seidel
Inventor
Dresden, DE
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10DInorganic electric semiconductor devices18%
B82YSpecific uses or applications of nanostructures10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H01LSemiconductor devices8%
H10KOrganic electric solid-state devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
B81BMicrostructural devices or systems, e.g. micromechanical devices3%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
PatentTitleYear
11,127,683Semiconductor structure with substantially straight contact profile202110,644,099Three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) and method20209,685,497'Embedded metal-insulator-metal capacitor'20179,478,602'Method of forming an embedded metal-insulator-metal (MIM) capacitor'20169,287,109'Methods of forming a protection layer to protect a metal hard mask layer during lithography reworking processes'20168,883,610'Microstructure device including a metallization structure with self-aligned air gaps between closely spaced metal lines'20148,741,770'Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process'20148,664,657'Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure'20148,580,684'Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layer'20138,420,533'Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding'20138,389,401'Contact elements of semiconductor devices formed on the basis of a partially applied activation layer'20138,344,474'Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones'20138,338,314'Technique for reducing topography-related irregularities during the patterning of a dielectric material in a contact level of closely spaced transistors'20128,319,259'Semiconductor power switch having nanowires'20128,314,494'Metal cap layer of increased electrode potential for copper-based metal regions in semiconductor devices'20128,293,641'Nano imprint technique with increased flexibility with respect to alignment and feature shaping'20128,198,190'Semiconductor device and method for patterning vertical contacts and metal lines in a common etch process'20128,163,594'Semiconductor device comprising a carbon-based material for through hole vias'20128,048,796'Microstructure device including a metallization structure with self-aligned air gaps formed based on a sacrificial material'20118,039,398'Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices'20117,928,004'Nano imprint technique with increased flexibility with respect to alignment and feature shaping'20117,875,514'Technique for compensating for a difference in deposition behavior in an interlayer dielectric material'20117,785,956'Technique for compensating for a difference in deposition behavior in an interlayer dielectric material'20107,745,327'Method of forming a copper-based metallization layer including a conductive cap layer by an advanced integration regime'20107,646,045'Method for fabricating a nanoelement field effect transistor with surrounded gate structure'20107,425,487'Method for fabricating a nanoelement field effect transistor with surrounded gate structure'20087,326,465'Integrated electronic component'20086,245,174'Heat recoverable article'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001Based in Hindsale, IL, US· patent location history
2008–2021Based in Dresden, DE· patent location history
2010–2013Patents assigned to ADVANCED MICRO DEVICES INC (9)· patent assignee history
2011–2020Patents assigned to GLOBALFOUNDRIES INC (12)· patent assignee history
2012–2014Patents assigned to SEIDEL ROBERT (13)· patent assignee history
2012–2014Patents assigned to RICHTER RALF (4)· patent assignee history
2012–2014Patents assigned to NOPPER MARKUS (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEIDEL ROBERTself | 13 | 2012–2014 |
| GLOBALFOUNDRIES INC | 12 | 2011–2020 |
| ADVANCED MICRO DEVICES INC | 9 | 2010–2013 |
| RICHTER RALF | 4 | 2012–2014 |
| NOPPER MARKUS | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 27 | 2008–2021 |
| Hindsale, Illinois, US | 1 | 2001 |