Inventor

Naohiro Sugiyama

Inventor

Nagoya, JP

Overview

1999–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth30%

H10DInorganic electric semiconductor devices20%

H01LSemiconductor devices10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

Y10TTechnical subjects covered by former us classification10%

C23CCoating metallic material7%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

C04BLime, magnesia3%

H01GCapacitors3%

PatentTitleYear

10,490,635Semiconductor substrate made of silicon carbide and method for manufacturing same2019 9,450,068'Method for manufacturing silicon carbide semiconductor device'2016 9,412,831'Manufacturing method for silicon carbide semiconductor device'2016 8,604,540'Semiconductor device and method of manufacturing the same'2013 8,575,648'Silicon carbide semiconductor device and method of manufacturing the same'2013 8,373,209'Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the same'2013 8,194,392'Ceramic material and electronic device'2012 7,217,323'Equipment and method for manufacturing silicon carbide single crystal'2007 7,135,074'Method for manufacturing silicon carbide single crystal from dislocation control seed crystal'2006 6,786,969'Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal'2004 6,451,112'Method and apparatus for fabricating high quality single crystal'2002 6,214,108'Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same'2001 5,964,944'Method of producing silicon carbide single crystal'1999 5,944,890'Method of producing single crystals and a seed crystal used in the method'1999 5,895,526'Process for growing single crystal'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2019Patents assigned to DENSO CORP (13)· patent assignee history

1999–2001Patents assigned to TOYODA CHUO KENKYUSHO KK (2)· patent assignee history

1999–2016Based in Nagoya, JP· patent location history

2001–2004Based in Aichi, JP· patent location history

2012–2013Patents assigned to MALHAN RAJESH KUMAR (4)· patent assignee history

2012–2013Patents assigned to SUGIYAMA NAOHIRO (4)· patent assignee history

2013Patents assigned to TAKEUCHI YUUICHI (2)· patent assignee history

2019Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
DENSO CORP	13	1999–2019
MALHAN RAJESH KUMAR	4	2012–2013
SUGIYAMA NAOHIROself	4	2012–2013
TAKEUCHI YUUICHI	2	2013
TOYODA CHUO KENKYUSHO KK	2	1999–2001

Locations

Location	Patents	Span
Nagoya, JP	11	1999–2016
Aichi, JP	3	2001–2004
Kariya, JP	1	2019