Inventor

Katsuyuki Horita

Inventor

Tokyo, JP

Overview

1999–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1032%

H10DInorganic electric semiconductor devices27%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10BElectronic memory devices9%

H01LSemiconductor devices8%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

G11CStatic stores2%

G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%

G01NInvestigating or analysing materials by determining their chemical or physical properties1%

PatentTitleYear

10,895,504Terahertz wave spectroscopic measurement apparatus and terahertz wave spectroscopic measurement method2021 9,484,271'Semiconductor device and method of manufacturing the same'2016 9,343,527'Semiconductor device including an isolation film buried in a groove'2016 9,287,259'Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device'2016 9,142,567'SOI SRAM having well regions with opposite conductivity'2015 9,029,951'Semiconductor device having well regions with opposite conductivity'2015 9,029,237'Semiconductor device and method of manufacturing the same'2015 9,024,386'Semiconductor device and method of manufacturing the same'2015 8,975,699'Semiconductor device'2015 8,872,267'Semiconductor device'2014 8,592,284'Semiconductor device and manufacturing method thereof'2013 8,587,085'Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof'2013 8,536,017'Method of manufacturing semiconductor device'2013 8,384,187'Semiconductor device with shallow trench isolation'2013 8,043,918'Semiconductor device and its manufacturing method'2011 7,791,163'Semiconductor device and its manufacturing method'2010 7,691,713'Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film'2010 7,244,655'Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film'2007 6,998,319'Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film'2006 6,890,837'Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate'2005 6,841,440'Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same'2005 6,777,758'Semiconductor device'2004 6,744,113'Semiconductor device with element isolation using impurity-doped insulator and oxynitride film'2004 6,737,315'Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate'2004 6,707,099'Semiconductor device and manufacturing method thereof'2004 6,661,066'Semiconductor device including inversely tapered gate electrode and manufacturing method thereof'2003 6,548,871'Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer'2003 6,541,825'Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same'2003 6,503,799'Method of manufacturing semiconductor device'2003 6,498,077'Semiconductor device and method of manufacturing same'2002 6,482,718'Method of manufacturing semiconductor device'2002 6,399,985'Semiconductor device'2002 6,383,884'Method of manufacturing semiconductor device'2002 6,372,604'Method for forming a trench type element isolation structure and trench type element isolation structure'2002 6,323,102'Method of manufacturing a semiconductor device'2001 6,303,432'Method of manufacturing a semiconductor device'2001 6,274,457'Method for manufacturing an isolation trench having plural profile angles'2001 6,268,263'Method of forming a trench type element isolation in semiconductor substrate'2001 6,265,743'Trench type element isolation structure'2001 6,218,262'Semiconductor device and method of manufacturing the same'2001 6,214,695'Method of manufacturing semiconductor device'2001 6,162,669'Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer'2000 6,150,233'Semiconductor device and method of manufacturing the same'2000 6,127,737'Semiconductor device and manufacturing method thereof'2000 6,034,409'Isolation trench having plural profile angles'2000 6,017,800'Semiconductor device and method of fabricating thereof'2000 5,932,912'Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer'1999 5,889,335'Semiconductor device and method of manufacturing the same'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2003Patents assigned to MITSUBISHI ELECTRIC CORP (23)· patent assignee history

1999–2013Based in Tokyo, JP· patent location history

2004–2010Patents assigned to RENESAS TECH CORP (10)· patent assignee history

2005Based in Chiyoda-ku, JP· patent location history

2011–2016Patents assigned to RENESAS ELECTRONICS CORP (14)· patent assignee history

2013–2016Patents assigned to HORITA KATSUYUKI (6)· patent assignee history

2013Patents assigned to KANEOKA TATSUNORI (2)· patent assignee history

2013–2016Based in Kanagawa, JP· patent location history

2014–2015Based in Kawasaki, JP· patent location history

2021Based in Hamamatsu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI ELECTRIC CORP	23	1999–2003
RENESAS ELECTRONICS CORP	14	2011–2016
RENESAS TECH CORP	10	2004–2010
HORITA KATSUYUKIself	6	2013–2016
KANEOKA TATSUNORI	2	2013

Locations

Location	Patents	Span
Tokyo, JP	35	1999–2013
Kanagawa, JP	8	2013–2016
Kawasaki, JP	3	2014–2015
Hamamatsu, JP	1	2021
Chiyoda-ku, JP	1	2005