Inventor
Young-Wug Kim
Inventor
Suwon-si, KR
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices11%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
H10BElectronic memory devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%
G11CStatic stores1%
PatentTitleYear
9,991,424Light-emitting diode and method for manufacturing same20189,653,018'Light-emitting diode driving device, driving method and light-emitting diode lighting module comprising the same'20179,508,909'Light-emitting diode and method for manufacturing same'20169,450,141'Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods'20169,373,496'Substrate recycling method and recycled substrate'20169,362,449'High efficiency light emitting diode and method of fabricating the same'20169,257,340'Wafer and method for forming the same'20169,236,533'Light emitting diode and method for manufacturing same'20169,159,870'Method of fabricating gallium nitride based semiconductor device'20159,018,027'Method of fabricating gallium nitride-based semiconductor device'20157,602,465'In-plane switching mode liquid crystal display device'20097,410,843'Methods for fabricating reduced floating body effect static random access memory cells'20087,348,636'CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof'20087,323,420'Method for manufacturing multi-thickness gate dielectric layer of semiconductor device'20087,217,622'Semiconductor device and method of manufacturing the semiconductor device'20077,179,750'Method for manufacturing multi-thickness gate dielectric layer of semiconductor device'20077,105,900'Reduced floating body effect static random access memory cells and methods for fabricating the same'20066,911,397'Method of forming dual damascene interconnection using low-k dielectric'20056,900,503'SRAM formed on SOI substrate'20056,855,641'CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof'20056,806,157'Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same'20046,794,716'SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same'20046,706,569'SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same'20046,703,280'SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same'20046,689,648'Semiconductor device having silicon on insulator and fabricating method therefor'20046,656,814'Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regions'20036,548,877'Metal oxide semiconductor field effect transistor for reducing resistance between source and drain'20036,521,959'SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same'20036,498,370'SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same'20026,492,260'Method of fabricating damascene metal wiring'20026,437,445'Niobium-near noble metal contact structures for integrated circuits'20026,407,429'Semiconductor device having silicon on insulator and fabricating method therefor'20026,255,697'Integrated circuit devices including distributed and isolated dummy conductive regions'20016,150,249'Methods of forming niobium-near noble metal contact structures for integrated circuits'20006,074,907'Method of manufacturing capacitor for analog function'20005,674,782'Method for efficiently removing by-products produced in dry-etching'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2008Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
1997–2004Based in Suwon-si, KR· patent location history
2000–2003Based in Kyungki-do, KR· patent location history
2005–2016Based in Seoul, KR· patent location history
2009Patents assigned to LG DISPLAY CO LTD (1)· patent assignee history
2009Based in Kyonggi-do, KR· patent location history
2015–2018Patents assigned to SEOUL VIOSYS CO LTD (9)· patent assignee history
2015Patents assigned to SEOUL OPTO DEVICE CO LTD (1)· patent assignee history
2015–2018Based in Ansan-si, KR· patent location history
2016Patents assigned to SK HYNIX INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 25 | 1997–2008 |
| SEOUL VIOSYS CO LTD | 9 | 2015–2018 |
| LG DISPLAY CO LTD | 1 | 2009 |
| SEOUL OPTO DEVICE CO LTD | 1 | 2015 |
| SK HYNIX INC | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Suwon-si, KR | 12 | 1997–2004 |
| Seoul, KR | 10 | 2005–2016 |
| Ansan-si, KR | 9 | 2015–2018 |
| Kyungki-do, KR | 4 | 2000–2003 |
| Kyonggi-do, KR | 1 | 2009 |