Inventor
Hyun-jong Chung
Inventor
Hwaseong-si, KR
Overview
Patents· 44 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices17%
B82YSpecific uses or applications of nanostructures14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
C01BNon-metallic elements5%
Y10TTechnical subjects covered by former us classification3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units2%
C23CCoating metallic material2%
PatentTitleYear
10,777,639Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same20209,525,076'Memory device using graphene as charge-trap layer and method of operating the same'20169,373,685'Graphene device and electronic apparatus'20169,359,211'Methods of fabricating graphene using alloy catalyst'20169,306,005'Electronic device including graphene'20169,306,021'Graphene devices and methods of fabricating the same'20169,299,789'Memory devices including graphene switching devices'20169,281,404'Three-dimensional graphene switching device'20169,257,528'Graphene electronic device and method of fabricating the same'20169,184,236'Method of transferring graphene using trench and substrate for receiving graphene'20159,166,062'Field effect transistor using graphene'20159,142,635'Graphene electronic device and method of fabricating the same'20159,136,336'Inverter logic devices including graphene field effect transistor having tunable barrier'20159,108,848'Methods of manufacturing and transferring larger-sized graphene'20159,105,556'Tunneling field-effect transistor including graphene channel'20159,093,509'Graphene electronic devices'20159,064,777'Graphene switching device having tunable barrier'20159,053,932'Methods of preparing graphene and device including graphene'20159,048,310'Graphene switching device having tunable barrier'20159,042,683'Optical modulator including graphene'20159,040,957'Field effect transistor using graphene'20158,999,201'Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same'20158,912,530'Electrode structure including graphene and field effect transistor having the same'20148,884,345'Graphene electronic device and method of fabricating the same'20148,835,899'Graphene electronic device and method of fabricating the same'20148,785,912'Graphene electronic device including a plurality of graphene channel layers'20148,742,478'Graphene transistor having air gap, hybrid transistor having the same, and methods of fabricating the same'20148,728,880'Graphene electronic device and method of fabricating the same'20148,664,439'Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same'20148,592,799'Graphene electronic device and method of fabricating the same'20138,575,665'Graphene electronic device and method of fabricating the same'20138,513,653'Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same'20138,499,709'Mooring system for a vessel'20138,487,356'Graphene device and method of manufacturing the same'20138,476,994'Electromechanical switch and method of manufacturing the same'20138,421,131'Graphene electronic device and method of fabricating the same'20138,405,133'Semiconductor device including graphene and method of manufacturing the semiconductor device'20138,294,972'Display devices'20128,274,098'Field effect transistor, logic circuit including the same and methods of manufacturing the same'20128,159,037'Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure'20128,101,980'Graphene device and method of manufacturing the same'20127,994,815'Cross-point latch and method of operating the same'20117,978,006'Quantum interference transistors and methods of manufacturing and operating the same'20115,468,263'Fuel composition containing alkylphenyl poly(oxyalkylene) polyamine acid ester'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995Based in Seoul, KR· patent location history
2011–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (41)· patent assignee history
2011–2016Based in Hwaseong-si, KR· patent location history
2012–2016Patents assigned to CHUNG HYUN-JONG (23)· patent assignee history
2012–2016Patents assigned to SEO SUN-AE (16)· patent assignee history
2012–2016Patents assigned to HEO JIN-SEONG (15)· patent assignee history
2012–2013Based in Daejeon, KR· patent location history
2013–2015Patents assigned to YANG HEE-JUN (10)· patent assignee history
2020Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 41 | 2011–2016 |
| CHUNG HYUN-JONGself | 23 | 2012–2016 |
| SEO SUN-AE | 16 | 2012–2016 |
| HEO JIN-SEONG | 15 | 2012–2016 |
| YANG HEE-JUN | 10 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 40 | 2011–2016 |
| Daejeon, KR | 2 | 2012–2013 |
| Gyeonggi-do, KR | 1 | 2020 |
| Seoul, KR | 1 | 1995 |