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Inventor

Shigenori Ozaki

Inventor
Amagasaki, JP

Overview

27→
Patents
2005–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H01JElectric discharge tubes or discharge lamps19%
H10DInorganic electric semiconductor devices15%
C23CCoating metallic material11%
C12MApparatus for enzymology or microbiology6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C12NMicroorganisms or enzymes3%
Y10TTechnical subjects covered by former us classification3%
B08BCleaning in general1%
B25JManipulators1%
PatentTitleYear
10,704,073Method for determining undifferentiated state of pluripotent stem cells by culture medium analysis202010,636,680Robot transport device202010,563,159Cell-holding container and cell culture method using same202010,370,632Facility for culturing pluripotent stem cells201910,351,811Cell culture container20199,991,097Plasma processing apparatus20189,932,674Film deposition apparatus, film deposition method, and computer-readable recording medium20188,961,735'Plasma processing apparatus and microwave introduction device'20158,642,487'Film deposition method and film deposition apparatus'20148,183,165'Plasma processing method'20128,067,809'Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same'20118,021,987'Method of modifying insulating film'20117,897,518'Plasma processing method and computer storage medium'20117,887,637'Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning'20117,723,241'Plasma processing method and computer storage medium'20107,713,864'Method of cleaning semiconductor substrate conductive layer surface'20107,662,236'Method for forming insulation film'20107,655,574'Method of modifying insulating film'20107,632,758'Process and apparatus for forming oxide film, and electronic device material'20097,622,402'Method for forming underlying insulation film'20097,560,396'Material for electronic device and process for producing the same'20097,446,052'Method for forming insulation film'20087,429,539'Nitriding method of gate oxide film'20087,232,772'Substrate processing method'20077,226,874'Substrate processing method'20077,217,659'Process for producing materials for electronic device'20076,897,149'Method of producing electronic device material'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2020Patents assigned to TOKYO ELECTRON LTD (24)· patent assignee history
2005–2012Based in Amagasaki, JP· patent location history
2011–2018Patents assigned to OZAKI SHIGENORI (5)· patent assignee history
2011–2015Patents assigned to KITAGAWA JUNICHI (2)· patent assignee history
2014–2018Patents assigned to KATO HITOSHI (2)· patent assignee history
2014–2018Patents assigned to KIKUCHI HIROYUKI (2)· patent assignee history
2014–2018Based in Yamanashi, JP· patent location history
2015–2020Based in Nirasaki, JP· patent location history
2019–2020Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD242005–2020
OZAKI SHIGENORIself52011–2018
KATO HITOSHI22014–2018
KIKUCHI HIROYUKI22014–2018
KITAGAWA JUNICHI22011–2015
Locations
LocationPatentsSpan
Amagasaki, JP182005–2012
Tokyo, JP32019–2020
Nirasaki, JP32015–2020
Yamanashi, JP32014–2018