Inventor
Berinder P. S. Brar
Inventor
Newbury Park, CA, US
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices60%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
A61KPreparations for medical, dental or toiletry purposes2%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations2%
C12NMicroorganisms or enzymes2%
G01RMeasuring electric variables2%
PatentTitleYear
11,124,793Compositions and methods for treatment of cardiac diseases20218,415,737'Semiconductor device with a pillar region and method of forming the same'20138,043,910'Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode'20117,989,842'Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity'20117,838,905'Semiconductor device having multiple lateral channels and method of forming the same'20107,820,541'Process for forming low defect density heterojunctions'20107,808,016'Heterogeneous integration of low noise amplifiers with power amplifiers or switches'20107,755,106'Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode'20107,675,090'Semiconductor device having a contact on a buffer layer thereof and method of forming the same'20107,663,183'Vertical field-effect transistor and method of forming the same'20107,655,963'Semiconductor device including a lateral field-effect transistor and Schottky diode'20107,642,568'Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same'20107,564,074'Semiconductor device including a lateral field-effect transistor and Schottky diode'20097,563,713'Semiconductor devices having plated contacts, and methods of manufacturing the same'20097,541,640'Vertical field-effect transistor and method of forming the same'20097,518,165'Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs'20097,504,673'Semiconductor device including a lateral field-effect transistor and Schottky diode'20097,462,891'Semiconductor device having an interconnect with sloped walls and method of forming the same'20087,439,556'Substrate driven field-effect transistor'20087,439,557'Semiconductor device having a lateral channel and contacts on opposing surfaces thereof'20087,354,820'Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating'20087,339,209'Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode'20087,339,208'Semiconductor device having multiple lateral channels and method of forming the same'20087,285,807'Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same'20077,030,038'Low temperature method for forming a thin, uniform oxide'20066,958,491'Bipolar transistor test structure with lateral test probe pads'20056,949,776'Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating'20056,870,184'Mechanically-stable BJT with reduced base-collector capacitance'20056,858,887'BJT device configuration and fabrication method with reduced emitter width'20056,815,237'Testing apparatus and method for determining an etch bias associated with a semiconductor-processing step'20046,800,531'Method of fabricating a bipolar transistor'20046,797,995'Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector'20046,706,574'Field effect transistor and method for making the same'20046,605,825'Bipolar transistor characterization apparatus with lateral test probe pads'20036,414,340'Field effect transistor and method for making the same'20026,255,150'Use of crystalline SiOx barriers for Si-based resonant tunneling diodes'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2006Based in Plano, TX, US· patent location history
2002–2013Based in Newbury Park, CA, US· patent location history
2004–2005Patents assigned to ROCKWELL SCIENT LICENSING LLC (5)· patent assignee history
2007–2008Patents assigned to COLDWATT INC (5)· patent assignee history
2008–2010Patents assigned to TELEDYNE LICENSING LLC (4)· patent assignee history
2008–2011Patents assigned to BOEING CO (3)· patent assignee history
2009–2013Patents assigned to FLEXTRONICS INT USA INC (9)· patent assignee history
2021Based in La Jolla, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FLEXTRONICS INT USA INC | 9 | 2009–2013 |
| COLDWATT INC | 5 | 2007–2008 |
| ROCKWELL SCIENT LICENSING LLC | 5 | 2004–2005 |
| TELEDYNE LICENSING LLC | 4 | 2008–2010 |
| BOEING CO | 3 | 2008–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Newbury Park, California, US | 33 | 2002–2013 |
| Plano, Texas, US | 2 | 2001–2006 |
| La Jolla, California, US | 1 | 2021 |