Inventor
ARKADIUSZ MALINOWSKI
Inventor
DE
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices36%
H10DInorganic electric semiconductor devices36%
B82YSpecific uses or applications of nanostructures12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
12,408,417Forksheet semiconductor structure including at least one bipolar junction transistor and method202511,916,136Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base202411,804,542Annular bipolar transistors202311,646,361Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin202311,462,632Lateral bipolar junction transistor device and method of making such a device202211,424,349Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices202211,362,177Epitaxial semiconductor material regions for transistor devices and methods of forming same202211,239,315Dual trench isolation structures202211,205,699Epitaxial semiconductor material regions for transistor devices and methods of forming same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to GLOBALFOUNDRIES US INC (9)· patent assignee history
2021–2022Based in US· patent location history
2022–2025Based in DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES US INC | 9 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| DE | 7 | 2022–2025 |
| US | 2 | 2021–2022 |