LexDanaLexDanabeta
Inventor

Akira Koshiishi

Inventor
Nirasaki, JP

Overview

61→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps37%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H01LSemiconductor devices7%
C23CCoating metallic material5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C23FNon-mechanical removal of metallic material from surface3%
H05HPlasma technique3%
B05DProcesses for applying fluent materials to surfaces, in general1%
C03CChemical composition of glasses, glazes or vitreous enamels1%
PatentTitleYear
10,950,414Plasma processing apparatus and method of manufacturing semiconductor device using the same202110,861,678Plasma etching apparatus and method202010,854,431Plasma processing apparatus and method202010,720,314Confinement ring for use in a plasma processing system202010,546,727Plasma processing apparatus and method202010,529,596Capacitive coupling plasma processing apparatus and method for using the same202010,529,539Plasma processing apparatus and method202010,347,499Method for etching layer to be etched201910,229,815Plasma etching apparatus and method20199,685,305'Plasma processing apparatus and plasma processing method'20179,607,866'Capacitive coupling plasma processing apparatus and method for using the same'20179,490,105'Plasma processing apparatus and method'20169,177,756'E-beam enhanced decoupled source for semiconductor processing'20159,111,728'E-beam enhanced decoupled source for semiconductor processing'20158,980,046'Semiconductor processing system with source for decoupled ion and radical control'20158,852,385'Plasma etching apparatus and method'20148,790,490'Plasma processing apparatus and method'20148,741,098'Table for use in plasma processing system and plasma processing system'20148,627,783'Combined wafer area pressure control and plasma confinement assembly'20148,603,293'Plasma processing apparatus and method'20138,512,510'Plasma processing method and apparatus'20138,506,753'Capacitive coupling plasma processing apparatus and method for using the same'20138,137,471'Plasma processing apparatus and method'20128,084,375'Hot edge ring with sloped upper surface'20118,080,126'Plasma processing apparatus'20118,048,327'Plasma processing apparatus and control method thereof'20118,008,596'Plasma processing apparatus and electrode used therein'20117,993,489'Capacitive coupling plasma processing apparatus and method for using the same'20117,988,814'Plasma processing apparatus, plasma processing method, focus ring, and focus ring component'20117,988,816'Plasma processing apparatus and method'20117,951,262'Plasma processing apparatus and method'20117,882,800'Ring mechanism, and plasma processing device using the ring mechanism'20117,740,737'Plasma processing apparatus and method'20107,658,816'Focus ring and plasma processing apparatus'20107,642,193'Method of treating a mask layer prior to performing an etching process'20107,572,386'Method of treating a mask layer prior to performing an etching process'20097,537,672'Apparatus for plasma processing'20097,506,610'Plasma processing apparatus and method'20097,494,561'Plasma processing apparatus and method, and electrode plate for plasma processing apparatus'20097,449,414'Method of treating a mask layer prior to performing an etching process'20086,764,575'Magnetron plasma processing apparatus'20046,733,624'Apparatus for holding an object to be processed'20046,576,860'Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate'20036,544,380'Plasma treatment method and apparatus'20036,426,477'Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate'20026,423,242'Etching method'20026,264,788'Plasma treatment method and apparatus'20016,190,495'Magnetron plasma processing apparatus'20016,106,737'Plasma treatment method utilizing an amplitude-modulated high frequency power'20006,074,518'Plasma processing apparatus'20006,072,147'Plasma processing system'20005,972,799'Dry etching method'19995,928,963'Plasma etching method'19995,919,332'Plasma processing apparatus'19995,900,103'Plasma treatment method and apparatus'19995,698,035'Heat-resistant electrode material, electrode using the same, and apparatus having plasma generating unit using this electrode'19975,252,892'Plasma processing apparatus'19935,101,110'Ion generator'19925,089,747'Electron beam excitation ion source'19925,083,061'Electron beam excited ion source'19925,028,791'Electron beam excitation ion source'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2020Patents assigned to TOKYO ELECTRON LTD (54)· patent assignee history
1991–2014Based in Kofu, JP· patent location history
2002–2020Based in Nirasaki, JP· patent location history
2011–2015Patents assigned to KOSHIISHI AKIRA (13)· patent assignee history
2011–2020Patents assigned to LAM RES CORP (6)· patent assignee history
2011–2015Based in San Jose, CA, US· patent location history
2011–2020Based in Yamanashi, JP· patent location history
2012–2014Patents assigned to KOBAYASHI NORIYUKI (4)· patent assignee history
2012–2014Patents assigned to KOSHIMIZU CHISHIO (4)· patent assignee history
2017–2019Based in Miyagi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD541991–2020
KOSHIISHI AKIRAself132011–2015
LAM RES CORP62011–2020
KOBAYASHI NORIYUKI42012–2014
KOSHIMIZU CHISHIO42012–2014
Locations
LocationPatentsSpan
Nirasaki, JP262002–2020
Kofu, JP231991–2014
San Jose, California, US52011–2015
Yamanashi, JP32011–2020
Miyagi, JP22017–2019