Inventor
Jung-Hsien Hsu
Inventor
Hsinchu, TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices27%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests27%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
6,218,716'Enhanced structure for salicide MOSFET'20016,180,290'Multi-phase mask using multi-layer thin films'20016,093,640'Overlay measurement improvement between damascene metal interconnections'20006,074,922'Enhanced structure for salicide MOSFET'20005,702,982'Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits'19975,620,817'Fabrication of self-aligned attenuated rim phase shift mask'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2001Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
1997–2001Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 6 | 1997–2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 6 | 1997–2001 |