Inventor
Jian Yu
Inventor
Danbury, CT, US
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10BElectronic memory devices3%
F28DHeat-exchange apparatus, not provided for in another subclass, in which the heat-exchange media do not come into direct contact2%
F28FDetails of heat-exchange and heat-transfer apparatus, of general application2%
G11CStatic stores2%
H02NElectric machines not otherwise provided for2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,873,276Apparatus and method for harvesting ambient energy by circuit reconfiguration202010,848,079Ambient energy harvesting device with charge-carrying movable electrode202010,813,180Illumination device having multiple light sources and manufacturing method thereof20209,761,679'Performance optimized gate structures having memory device and logic device, the memory device with silicided source/drain regions that are raised with respect to silicided source/drain regions of the logic device'20179,735,058'Method of forming performance optimized gate structures by silicidizing lowered source and drain regions'20179,735,268'Method for forming metal semiconductor alloys in contact holes and trenches'20179,559,202'Method for forming metal semiconductor alloys in contact holes and trenches'20179,455,195'Method of forming performance optimized gate structures by silicidizing lowered source and drain regions'20169,425,309'Method for forming metal semiconductor alloys in contact holes and trenches'20169,337,289'Replacement gate MOSFET with a high performance gate electrode'20169,293,554'Self-aligned liner formed on metal semiconductor alloy contacts'20169,224,687'Programmable fuse structure and methods of forming'20159,153,546'Reliable electrical fuse with localized programming and method of making the same'20159,093,425'Self-aligned liner formed on metal semiconductor alloy contacts'20159,006,801'Method for forming metal semiconductor alloys in contact holes and trenches'20158,987,078'Metal semiconductor alloy contact with low resistance'20158,981,523'Programmable fuse structure and methods of forming'20158,969,933'Replacement gate MOSFET with a high performance gate electrode'20158,927,378'Trench silicide contact with low interface resistance'20158,916,435'Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory'20148,896,088'Reliable electrical fuse with localized programming'20148,643,122'Silicide contacts having different shapes on regions of a semiconductor device'20148,592,266'Replacement gate MOSFET with a high performance gate electrode'20138,569,810'Metal semiconductor alloy contact with low resistance'20138,415,250'Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device'20138,149,580'Heat dissipation device for electronic device assembly'20128,017,483'Method of creating asymmetric field-effect-transistors'20118,004,845'Fastening assembly for heat dissipation device'20117,965,513'Electronic device assembly with heat dissipation device'20117,764,500'Electronic system with a heat sink assembly'20107,746,651'Heat sink assembly having a clip'20107,701,718'Heat sink assembly'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2012Patents assigned to FOXCONN TECH CO LTD (6)· patent assignee history
2010–2012Patents assigned to FU ZHUN PRECISION IND SHENZHEN (6)· patent assignee history
2010–2012Based in Shenzhen, CN· patent location history
2011–2017Patents assigned to IBM (21)· patent assignee history
2013–2015Patents assigned to YU JIAN (7)· patent assignee history
2013–2015Patents assigned to LI ZHENGWEN (6)· patent assignee history
2013–2017Based in Danbury, CT, US· patent location history
2016–2017Based in Pflugerville, TX, US· patent location history
2020Based in Honolulu, HI, US· patent location history
2020Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 21 | 2011–2017 |
| YU JIANself | 7 | 2013–2015 |
| FOXCONN TECH CO LTD | 6 | 2010–2012 |
| FU ZHUN PRECISION IND SHENZHEN | 6 | 2010–2012 |
| LI ZHENGWEN | 6 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Danbury, CT, US | 19 | 2013–2017 |
| Shenzhen, CN | 6 | 2010–2012 |
| Pflugerville, Texas, US | 3 | 2016–2017 |
| Honolulu, HI, US | 2 | 2020 |
| Shanghai, CN | 1 | 2020 |