Inventor

Sang-Bo Lee

Inventor
Yongin-si, KR

Overview

38→
Patents
1997–2019
Patent span
Physics
Primary field (CPC G)

Patents· 38 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores41%
G06FElectric digital data processing8%
G06TImage data processing or generation, in general8%
H04NPictorial communication, e.g. television8%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses5%
G01SRadio direction-finding3%
G06KGraphical data reading3%
G06VImage or video recognition or understanding3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
A63FCard, board, or roulette games2%
PatentTitleYear
10,186,045Methods of and apparatuses for recognizing motion of objects, and associated systems201910,171,790Depth sensor, image capture method, and image processing system using depth sensor201910,101,874Apparatus and method for controlling user interface to select object within image and image input device20189,858,981'Semiconductor memory devices including redundancy memory cells'20189,838,573Method for guiding controller to move to within recognizable range of multimedia apparatus, the multimedia apparatus, and target tracking apparatus thereof20179,829,983Mobile systems including image sensors, methods of operating image sensors, and methods of operating mobile systems20179,773,164'Apparatus and method for recognizing human body in hybrid manner'20179,715,740'Methods of and apparatuses for recognizing motion of objects, and associated systems'20179,621,868'Depth sensor, image capture method, and image processing system using depth sensor'20179,594,945'Method and apparatus for protecting eyesight'20179,524,770'Semiconductor memory devices including redundancy memory cells'20169,436,545'Semiconducotr memory device including non-volatile memory cell array'20169,336,906'Semiconductor memory devices including redundancy memory cells'20169,000,572'Semiconductor package'20158,917,564'Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data therein'20148,488,399'Semiconductor devices having a three-dimensional stacked structure and methods of de-skewing data therein'20137,855,926'Semiconductor memory device having local sense amplifier with on/off control'20107,423,896'Local sense amplifier in memory device'20087,366,822'Semiconductor memory device capable of reading and writing data at the same time'20087,298,667'Latency control circuit and method of latency control'20077,292,486'Methods and circuits for latency control in accessing memory devices'20077,236,414'Local sense amplifier in memory device'20077,219,026'Frequency measuring circuits including charge pumps and related memory devices and methods'20077,065,003'Latency control circuit and method of latency control'20067,038,963'Current sense amplifier circuits having a bias voltage node for adjusting input resistance'20066,944,091'Latency control circuit and method of latency control'20056,914,829'Multi-stage output multiplexing circuits and methods for double data rate synchronous memory devices'20056,625,242'Delay locked loops and methods that shift the phase of a delayed clock signal based on a reference phase value'20036,356,489'Integrated circuit memory devices having circuits therein that preserve minimum /RAS TO /CAS Delays'20026,329,854'Phase locked loop integrated circuits having dynamic phase locking characteristics and methods of operating same'20016,282,128'Integrated circuit memory devices having multiple data rate mode capability and methods of operating same'20016,232,813'Phase locked loop integrated circuits having fuse-enabled and fuse-disabled delay devices therein'20016,094,375'Integrated circuit memory devices having multiple data rate mode capability and methods of operating same'20005,920,511'High-speed data input circuit for a synchronous memory device'19995,777,934'Semiconductor memory device with variable plate voltage generator'19985,748,543'Self repairing integrated circuit memory devices and methods'19985,701,268'Sense amplifier for integrated circuit memory devices having boosted sense and current drive capability and methods of operating same'19975,638,333'Bit line sensing circuit and method of a semiconductor memory device'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (38)· patent assignee history
1997–2003Based in Kyungki-do, KR· patent location history
1997–2007Based in Yongin, KR· patent location history
2005–2018Based in Gyeonggi-do, KR· patent location history
2007–2019Based in Yongin-si, KR· patent location history
2013–2017Patents assigned to LEE SANG-BO (5)· patent assignee history
2014Based in Yongsin-si, KR· patent location history
2017Patents assigned to LEE GI-SANG (3)· patent assignee history
2017Patents assigned to CHOI JIN-WUK (2)· patent assignee history
2017Patents assigned to JIN YOUNG-GU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD381997–2019
LEE SANG-BOself52013–2017
LEE GI-SANG32017
CHOI JIN-WUK22017
JIN YOUNG-GU22017
Locations
LocationPatentsSpan
Yongin-si, KR142007–2019
Gyeonggi-do, KR92005–2018
Kyungki-do, KR91997–2003
Yongin, KR51997–2007
Yongsin-si, KR12014