Inventor
Zhong Zhang
Inventor
Hubei, CN
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10BElectronic memory devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G06FElectric digital data processing8%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
10,847,528Memory cell structure of a three-dimensional memory device202010,790,285Multi-division 3D NAND memory device202010,714,492Methods for forming multi-division staircase structure of three-dimensional memory device202010,644,015Memory cell structure of a three-dimensional memory device2020Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2020Patents assigned to YANGTZE MEMORY TECH CO LTD (4)· patent assignee history
2020Based in Hubei, CN· patent location history
2020Based in Wuhan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 4 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hubei, CN | 3 | 2020 |
| Wuhan, CN | 1 | 2020 |