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Inventor

Simon Wood

Inventor
Raleigh, NC, US

Overview

19→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H03FAmplifiers24%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices13%
B65DContainers for storage or transport of articles or materials, e.g. bags, barrels, bottles, boxes, cans, cartons, crates, drums, jars, tanks, hoppers, forwarding containers2%
G06FElectric digital data processing2%
H01GCapacitors2%
H03HImpedance networks, e.g. resonant circuits2%
H03KPulse technique2%
H04BTransmission2%
PatentTitleYear
10,692,998Bypassed gate transistors having improved stability202010,268,789Transistor amplifiers having node splitting for loop stability and related methods201910,128,365Bypassed gate transistors having improved stability20189,947,616High power MMIC devices having bypassed gate transistors20189,786,660'Transistor with bypassed gate structure field'20179,741,673'RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features'20179,641,163'Bandwidth limiting methods for GaN power transistors'20179,565,642'GaN amplifier for WiFi applications'20179,515,011'Over-mold plastic packaged wide band-gap power transistors and MMICS'20169,472,480'Over-mold packaging for wide band-gap semiconductor devices'20169,407,214'MMIC power amplifier'20168,592,966'RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors'20138,330,265'RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks'20128,076,994'RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction'20117,193,473'High power Doherty amplifier using multi-stage modules'20076,819,184'RF transistor amplifier linearity using suppressed third order transconductance'20046,798,295'Single package multi-chip RF power amplifier'20046,791,417'N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances'20046,737,922'N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004Patents assigned to CREE MICROWAVE INC (4)· patent assignee history
2004–2007Based in Sunnyvale, CA, US· patent location history
2004Based in Los Gatos, CA, US· patent location history
2007–2020Patents assigned to CREE INC (15)· patent assignee history
2011–2013Patents assigned to WOOD SIMON (3)· patent assignee history
2011–2012Patents assigned to FARRELL DONALD (2)· patent assignee history
2011–2020Based in Raleigh, NC, US· patent location history
2017Patents assigned to ANDRE ULF HAKAN (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CREE INC152007–2020
CREE MICROWAVE INC42004
WOOD SIMONself32011–2013
FARRELL DONALD22011–2012
ANDRE ULF HAKAN12017
Locations
LocationPatentsSpan
Raleigh, NC, US142011–2020
Sunnyvale, California, US32004–2007
Los Gatos, California, US22004