Inventor
Jun-Soo Bae
Inventor
Hwaseong-si, KR
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for30%
G11CStatic stores26%
H10BElectronic memory devices15%
B82YSpecific uses or applications of nanostructures10%
H01FMagnets5%
G11BInformation storage based on relative movement between record carrier and transducer4%
H10DInorganic electric semiconductor devices4%
H01LSemiconductor devices2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,164,173Magnetic random access memory devices and methods of manufacturing the same20189,761,792'Magnetic random access memory devices and methods of manufacturing the same'20178,772,121'Phase change memory devices and methods of manufacturing the same'20148,513,051'Methods of forming phase-changeable memory devices including an adiabatic layer'20138,238,147'Multi-level phase change memory device, program method thereof, and method and system including the same'20128,237,141'Non-volatile memory device including phase-change material'20128,168,535'Method fabricating semiconductor device using multiple polishing processes'20128,143,653'Variable resistance memory device and system thereof'20128,139,432'Variable resistance memory device and system thereof'20128,134,866'Phase change memory devices and systems, and related programming methods'20128,116,117'Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device'20128,050,084'Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device'20118,035,145'Magnetic memory device'20117,943,918'Multi-layer phase-changeable memory devices'20117,800,095'Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory'20107,787,278'Resistance variable memory device and operating method thereof'20107,778,066'Resistance variable memory device and programming method thereof'20107,767,568'Phase change memory device and method of fabricating the same'20107,732,222'Magnetic memory device and method of fabricating the same'20107,692,176'Phase-changeable memory devices including an adiabatic layer'20107,645,619'Magnetic random access memory device and method of forming the same'20107,638,788'Phase change memory device and method of forming the same'20097,615,401'Methods of fabricating multi-layer phase-changeable memory devices'20097,582,568'Method of forming a phase changeable structure'20097,582,890'Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof'20097,569,430'Phase changeable structure and method of forming the same'20097,558,100'Phase change memory devices including memory cells having different phase change materials and related methods and systems'20097,541,199'Methods of forming magnetic memory devices including oxidizing and etching magnetic layers'20097,425,735'Multi-layer phase-changeable memory devices'20087,378,698'Magnetic tunnel junction and memory device including the same'20087,372,090'Magnetic random access memory device and method of forming the same'20087,352,021'Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier'20087,351,594'Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier'20087,218,556'Method of writing to MRAM devices'20077,141,438'Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (35)· patent assignee history
2006–2013Based in Gyeonggi-do, KR· patent location history
2007–2010Based in Yongin-si, KR· patent location history
2008–2018Based in Hwaseong-si, KR· patent location history
2008Based in Hwasung, KR· patent location history
2012–2017Patents assigned to BAE JUN-SOO (10)· patent assignee history
2012Patents assigned to LEE KWANG-JIN (4)· patent assignee history
2012Patents assigned to CHO WOO-YEONG (3)· patent assignee history
2012Patents assigned to CHO BEAK-HYUNG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 35 | 2006–2018 |
| BAE JUN-SOOself | 10 | 2012–2017 |
| LEE KWANG-JIN | 4 | 2012 |
| CHO WOO-YEONG | 3 | 2012 |
| CHO BEAK-HYUNG | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 18 | 2008–2018 |
| Gyeonggi-do, KR | 14 | 2006–2013 |
| Yongin-si, KR | 2 | 2007–2010 |
| Hwasung, KR | 1 | 2008 |