Inventor
Michael G. Khazhinsky
Inventor
Austin, TX, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H02HEmergency protective circuit arrangements14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%
G05FSystems for regulating electric or magnetic variables4%
G11CStatic stores4%
H01LSemiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
9,806,521'Electrostatic discharge protection for a transformer balun'20179,324,701'Diode circuit layout topology with reduced lateral parasitic bipolar action'20168,009,397'Method and circuit for eFuse protection'20117,817,387'MIGFET circuit with ESD protection'20107,777,998'Electrostatic discharge circuit and method therefor'20107,593,202'Electrostatic discharge (ESD) protection circuit for multiple power domain integrated circuit'20097,589,945'Distributed electrostatic discharge protection circuit with varying clamp size'20097,573,114'Electronic device including a gated diode'20097,517,742'Area diode formation in SOI application'20097,446,990'I/O cell ESD system'20087,432,122'Electronic device and a process for forming the electronic device'20087,301,741'Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit'20077,236,339'Electrostatic discharge circuit and method therefor'20077,186,596'Vertical diode formation in SOI application'20076,900,970'Electrostatic discharge circuit and method therefor'20056,879,476'Electrostatic discharge circuit and method therefor'20056,500,723'Method for forming a well under isolation and structure thereof'20026,327,126'Electrostatic discharge circuit'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2002Patents assigned to MOTOROLA INC (2)· patent assignee history
2001–2017Based in Austin, TX, US· patent location history
2005–2011Patents assigned to FREESCALE SEMICONDUCTOR INC (14)· patent assignee history
2016–2017Patents assigned to SILICON LAB INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 14 | 2005–2011 |
| MOTOROLA INC | 2 | 2001–2002 |
| SILICON LAB INC | 2 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 18 | 2001–2017 |