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Inventor

Yoshikazu Saitoh

Inventor
Hamura, JP

Overview

26→
Patents
2003–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores33%
H03KPulse technique16%
H10BElectronic memory devices16%
H10DInorganic electric semiconductor devices16%
G05FSystems for regulating electric or magnetic variables5%
H03FAmplifiers5%
C07DHeterocyclic compounds3%
H01LSemiconductor devices3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
PatentTitleYear
9,530,485'Semiconductor integrated circuit device with reduced leakage current'20169,111,636'Semiconductor integrated circuit device with reduced leakage current'20158,797,791'Semiconductor integrated circuit device with reduced leakage current'20148,437,179'Semiconductor integrated circuit device with reduced leakage current'20138,232,589'Semiconductor integrated circuit device with reduced leakage current'20128,125,017'Semiconductor integrated circuit device with reduced leakage current'20127,964,484'Semiconductor integrated circuit device with reduced leakage current'20117,585,981'Method for producing trimer of indole derivative, and trimer of indole derivative and laminated structure thereof'20097,569,881'Semiconductor integrated circuit device with reduced leakage current'20097,436,247'Step-down circuit with stabilized output voltage'20087,388,238'Semiconductor integrated circuit device with reduced leakage current'20087,208,999'Step-down circuit with stabilized output voltage'20077,203,116'Semiconductor memory device'20077,115,751'Method for producing trimer of indole derivative, and trimer of indole derivative and laminated structure thereof'20067,087,942'Semiconductor integrated circuit device with reduced leakage current'20067,082,063'Semiconductor memory device'20066,998,674'Semiconductor integrated circuit device with reduced leakage current'20066,928,017'Semiconductor memory device'20056,885,057'Semiconductor integrated circuit device with reduced leakage current'20056,885,599'Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device'20056,809,578'Stable voltage generating circuit'20046,803,809'Step-down circuit for generating a stable internal voltage'20046,724,647'Variable logical circuit, semiconductor integrated circuit, and method for manufacturing semiconductor integrated circuit'20046,711,075'Semiconductor wafer, semiconductor chip, and manufacturing method of semiconductor device'20046,625,079'Semiconductor memory device'20036,563,755'Semiconductor memory device'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2007Patents assigned to HITACHI DEVICE ENG (4)· patent assignee history
2003–2016Based in Hamura, JP· patent location history
2004–2011Patents assigned to HITACHI ULSI SYS CO LTD (12)· patent assignee history
2004–2009Patents assigned to RENESAS TECH CORP (7)· patent assignee history
2006–2009Based in Yokohama, JP· patent location history
2011–2016Patents assigned to RENESAS ELECTRONICS CORP (7)· patent assignee history
2012–2013Patents assigned to ISHIBASHI KOICHIRO (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI ULSI SYS CO LTD122004–2011
RENESAS ELECTRONICS CORP72011–2016
RENESAS TECH CORP72004–2009
HITACHI DEVICE ENG42003–2007
ISHIBASHI KOICHIRO32012–2013
Locations
LocationPatentsSpan
Hamura, JP242003–2016
Yokohama, JP22006–2009