Inventor
Chai-Wei Chang
Inventor
New Taipei, TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
PatentTitleYear
11,133,400Structure and formation method of semiconductor device structure202110,854,519Fin field effect transistor (FinFET) device structure and method for forming the same202010,790,394Semiconductor device structure and method for forming the same202010,741,408Fin field effect transistor (FinFET) device structure and method for forming the same202010,714,587Method for fabricating metal gate devices and resulting structures202010,522,411Method for forming semiconductor device structure with gate201910,483,370Semiconductor structure with unleveled gate structure201910,468,407Fin field effect transistor (FinFET) device structure with uneven gate structure201910,411,113Structure and formation method of semiconductor device structure201910,312,149Fin field effect transistor (FinFET) device structure and method for forming the same201910,269,963Semiconductor device structure and method for forming the same201910,269,794Semiconductor device and method of manufacture201910,269,651Fin field effect transistor (FinFET) device structure and method for forming the same201910,262,870Fin field effect transistor (FinFET) device structure and method for forming the same201910,090,396Method for fabricating metal gate devices and resulting structures20189,818,648'Method for forming Fin field effect transistor (FinFET) device structure'20179,818,841'Semiconductor structure with unleveled gate structure and method for forming the same'20179,799,565'Method for forming semiconductor device structure with gate'20179,793,269'Semiconductor device and method of manufacture'20179,660,084'Semiconductor device structure and method for forming the same'20179,583,485'Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the same'20179,577,067'Metal gate and manufuacturing process thereof'20179,418,994'Fin field effect transistor (FinFET) device structure'20167,917,244'Method and system for reducing critical dimension side-to-side tilting error'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (1)· patent assignee history
2011Based in Taipei, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (23)· patent assignee history
2016–2021Based in New Taipei, TW· patent location history
2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 23 | 2016–2021 |
| TAIWAN SEMICONDUCTOR MFG | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Taipei, TW | 22 | 2016–2021 |
| Hsinchu, TW | 1 | 2019 |
| Taipei, TW | 1 | 2011 |